Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Rozé, Fabien"'
Autor:
Tabata, Toshiyuki, Rozé, Fabien, Thuries, Louis, Halty, Sébastien, Raynal, Pierre-Edouard, Karmous, Imen, Huet, Karim
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, while alleviating difficulties encountered in traditional planar scaling.
Externí odkaz:
http://arxiv.org/abs/2209.05337
Autor:
Tabata, Toshiyuki, Rozé, Fabien, Thuries, Louis, Halty, Sebastien, Raynal, Pierre-Edouard, Huet, Karim, Mazzamuto, Fulvio, Joshi, Abhijeet, Basol, Bulent M., Alba, Pablo Acosta, Kerdilès, Sébastien
Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typically from nanoseconds (ns) to microseconds (us) strongly limit the vertic
Externí odkaz:
http://arxiv.org/abs/2205.04669
Autor:
Tabata, Toshiyuki, Rozé, Fabien, Alba, Pablo Acosta, Halty, Sebastien, Raynal, Pierre-Edouard, Karmous, Imen, Kerdilés, Sébastien, Mazzamuto, Fulvio
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable thermal budget is restricted. In this work, UV-LA is performed to regro
Externí odkaz:
http://arxiv.org/abs/2204.12167
Autor:
Demoulin, Remi, Daubriac, Richard, Thuries, Louis, Scheid, Emmanuel, Rozé, Fabien, Cristiano, Fuccio, Tabata, Toshiyuki, Mazzamuto, Fulvio
The need of surface-localized thermal processing is strongly increasing especially w.r.t three-dimensionally (3D) integrated electrical devices. UV laser annealing (UV-LA) technology well addresses this challenge. Particularly UV-LA can reduce resist
Externí odkaz:
http://arxiv.org/abs/2204.11196
Autor:
Tabata, Toshiyuki, Raynal, Pierre-Edouard, Rozé, Fabien, Halty, Sébastien, Thuries, Louis, Cristiano, Fuccio, Scheid, Emmanuel, Mazzamuto, Fulvio
UV nanosecond pulsed laser annealing (UV NLA) enables both surface-localized heating and short timescale high temperature processing, which can be advantageous to reduce metal line resistance by enlarging metal grains in lines or in thin films, while
Externí odkaz:
http://arxiv.org/abs/2111.07580
Autor:
Tabata, Toshiyuki, Rozé, Fabien, Alba, Pablo Acosta, Halty, Sébastien, Raynal, Pierre-Edouard, Karmous, Imen, Kerdilès, Sébastien, Mazzamuto, Fulvio
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a
Externí odkaz:
http://arxiv.org/abs/2111.07577
Autor:
Tabata, Toshiyuki, Karim, Huet, Rozé, Fabien, Mazzamuto, Fulvio, Sermage, Bernard, Kopalidis, Petros, Roh, Dwight
Publikováno v:
ECS J. Solid State Sci. Technol. 10 (2021) 023005
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity in EC is so fast that a diffusion-less crystallization can be expected.
Externí odkaz:
http://arxiv.org/abs/2106.00946
Autor:
Rozé, Fabien
La réduction continue des dimensions des transistors depuis les années 60 est à l’origine de l’explosion des usages de l’électronique. Toutefois, la réduction des dimensions à l’échelle nanométrique s’accompagne de nouvelles difficu
Externí odkaz:
http://www.theses.fr/2018GREAI018/document
Akademický článek
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Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs
Autor:
Rozé, Fabien, Tabata, Toshiyuki, Kerdilès, Sébastien, M. Rubin, Leonard, Raynal, Pierre-Edouard, Acosta-Alba, Pablo, Roh, Dwight, Opprecht, Mathieu, Mazzamuto, Fulvio
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; May 2023, Vol. 342 Issue: 1 p79-83, 5p
