Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Royal G. Albridge"'
Autor:
J. K. Miller, Daniel M. Fleetwood, Z. Marka, Sokrates T. Pantelides, R. Pasternak, Amitabh Chatterjee, Y. V. Shirokaya, Norman Tolk, Royal G. Albridge, Sergey N. Rashkeev, B.K. Choi, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 50:1929-1933
Radiation induced leakage current in a variable-thickness SiO/sub 2/-on-Si structure (1.0-6.5 nm) is detected and characterized by a novel technique, time-dependent electric field-induced second-harmonic generation (EFISH). The role of second-harmoni
Autor:
B.K. Choi, Sergey N. Rashkeev, Norman Tolk, Z. Marka, R. Pasternak, Sokrates T. Pantelides, Royal G. Albridge, Daniel M. Fleetwood, Ronald D. Schrimpf
Publikováno v:
Journal of Applied Physics. 93:1865-1870
Damage enhanced electron transport, across thin oxides in x-ray irradiated Si/SiO2 samples, was measured via a contactless two-color laser technique. This method involves two steps: (1) optically stimulated electron injection into the oxide and (2) d
Autor:
Z. Hargitai, Y. Yao, Royal G. Albridge, Wolfgang Husinsky, Gerhard Betz, Gunter Lüpke, Alan V. Barnes, Jonathan M. Gilligan, Vernita Gordon, John C. Tully, B. Pratt Ferguson, M. M. Albert, Norman Tolk
Publikováno v:
Physical Review Letters. 81:550-553
An unexpected pronounced enhancement is observed in sputtering yields per atom for ${\mathrm{N}}_{2}^{+}$ compared to ${\mathrm{N}}^{+}$ from a polycrystalline gold target. This effect is seen when the kinetic energy per projectile atom is below 500
Autor:
Gunter Lüpke, J. Sturmann, Norman Tolk, A. Ueda, J.L. Davidson, Jonathan M. Gilligan, Alan V. Barnes, Royal G. Albridge
Publikováno v:
Applied Surface Science. :59-63
We report first studies of photodesorption from diamond films using the Vanderbilt Free-Electron Laser at two infrared wavelengths: 3.5 μ m, corresponding to localized absorption by C–H bonds at grain boundaries, and 5 μ m, corresponding to two-p
Autor:
Xue Yang, J. T. McKinley, M. T. Graham, Norman Tolk, Giorgio Margaritondo, Royal G. Albridge, Alan V. Barnes, W. Wang, Jonathan M. Gilligan, J.L. Davidson, A. Ueda, J. Sturmann
Publikováno v:
Scopus-Elsevier
As synchrotron radiation sources have been used for many experiments in the ultraviolet and X-ray regimes, the free-electron laser is an excellent source for a wide array of infrared-photon projects and applications. The free-electron laser delivers
Publikováno v:
Physical Review B. 55:2854-2858
We have observed anomalous temperature dependence in the ion-induced desorption of excited sodium atoms from sodium fluoride crystals. The fluorescence yield of the 3p-3d transition at 8195 {Angstrom}, and the 3p-4d transition at 5688 {Angstrom} incr
Autor:
Royal G. Albridge, Alan V. Barnes, Giorgio Margaritondo, G.A. Mensing, J. T. McKinley, Vernita Gordon, J.L. Davidson, Norman Tolk, J. Sturmann, B.M. Barnes
Publikováno v:
Applied Surface Science. 106:205-210
The free-electron laser (FEL) has become an important tool for producing high-intensity photon beams, especially in the infrared. Synchrotron radiation's primary spectral domains are in the ultraviolet and X-ray region. FEL's are therefore excellent
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 115:415-420
Defects created by 20 keV ion bombardment of NaF and LiF crystals have been investigated by optical absorption and luminescence measurements. The F center band and F-center aggregate bands have been identified in NaF and LiF crystals under argon ion
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 100:438-443
First measurements of the energy-dependent desorption cross sections near threshold energy for electron-stimulated desorption of excited CN molecules from potassium-metal surfaces are presented. Threshold energies were observed to be different when t
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 100:224-227
Defects induced by 20 keV ion bombardment of NaF and LiF crystals have been investigated by optical absorption and photo luminescence measurements. The F center band and F center aggregate bands have been identified in NaF and LiF crystals under argo