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Publikováno v:
Microelectronics Reliability. 129:114464
Publikováno v:
Journal of Electronic Testing. 34:351-362
FinFET technology is one of the most promising candidates in replacing planar MOSFET beyond the 22 nm technology node. However, the complexity of FinFET manufacturing process has caused challenges in reliable device testing. Gate oxide short (GOS) is
Publikováno v:
VTS
Manufacturing complexities due to FinFET's three-dimensional structure and reduced critical dimensions have caused new challenges in achieving reliable device testing. Gate oxide short (GOS) is one of the defects that requires a thorough investigatio