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pro vyhledávání: '"Roy Nath Jatinder"'
Autor:
Chaudhry Amit, Roy Nath Jatinder
Publikováno v:
Serbian Journal of Electrical Engineering, Vol 7, Iss 2, Pp 185-193 (2010)
In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been stu
Externí odkaz:
https://doaj.org/article/6705fb0d9d6a4deeafb58b60f56b3608
