Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Roy Koret"'
Autor:
Alain Moussa, Janusz Bogdanowicz, Benjamin Groven, Pierre Morin, Matteo Beggiato, Mohamed Saib, Gaetano Santoro, Yaniv Abramovitz, Kevin Houtchens, Shmuel Ben Nissim, Noga Meir, Joey Hung, Adam M. Urbanowicz, Roy Koret, Igor Turovets, Gian Francesco Lorusso, Anne-Laure Charley
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Autor:
Daniel Schmidt, Manasa Medikonda, Michael Rizzolo, Claire Silvestre, Julien Frougier, Andrew Greene, Mary Breton, Aron Cepler, Jacob Ofek, Itzik Kaplan, Roy Koret, Igor Turovets
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 22
Autor:
Manasa Medikonda, Daniel Schmidt, Michael Rizzolo, Mary A. Breton, Ashim Dutta, Heng Wu, Eric R. Evarts, Aron Cepler, Roy Koret, Igor Turovets, Daniel Edelstein
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Autor:
Daniel Schmidt, Manasa Medikonda, Michael Rizzolo, Claire Silvestre, Julien Frougier, Andrew Greene, Mary A. Breton, Aron Cepler, Jacob Ofek, Itzik Kaplan, Roy Koret, Igor Turovets
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Autor:
Daniel Schmidt, Aron Cepler, Curtis Durfee, Shanti Pancharatnam, Julien Frougier, Mary Breton, Andrew Greene, Mark Klare, Roy Koret, Igor Turovets
Methodologies for characterization of the lateral indentation of silicon-germanium (SiGe) nanosheets using different non-destructive and in-line compatible metrology techniques are presented and discussed. Gate-all-around nanosheet device structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0b883d3edd86a617680648728b9db75
Autor:
Igor Turovets, Jennifer Fullam, Mary Breton, Roy Koret, Karen Petrillo, Daniel Schmidt, Aron Cepler
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Comprehensive EUV resist characterization for line and space patterns at pitches between 32 and 40 nm using scatterometry in conjunction with machine learning algorithms is presented and discussed. Controlled experimental variations of EUV single exp
Autor:
Roy Koret, Gilad Belkin, Manasa Medikonda, Shay Wolfling, Curtis Durfee, Frougier Julien, Andrew M. Greene, Roy Shtainman, Daniel Schmidt, Igor Turovets, Dror Shafir, Aron Cepler, Shanti Pancharatnam
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
In this work, the novel enhancement to multichannel scatterometry data collection, Spectral Interferometry, is introduced and discussed. The Spectral Interferometry technology adds unique spectroscopic data by providing absolute phase information. Th
Autor:
Daniel Schmidt, Igor Turovets, Veeraraghavan S. Basker, Andrew M. Greene, Frougier Julien, Mary Breton, Aron Cepler, Marjorie Cheng, Dexin Kong, Nicolas Loubet, Mark Klare, Roy Koret, Jingyun Zhang, Abraham Arceo de la Pena, Ishtiaq Ahsan
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The methodology of measuring the lateral etch, or indentation, of SiGe nanosheets by using optical scatterometry, x-ray fluorescence, and machine learning algorithms is presented and discussed. Stacked nanosheet device structures were fabricated with
Autor:
Vanessa Zhang, Igor Turovets, Kavita Shah, Roy Koret, Silvia Armini, Rob Ameloot, Joey Hung, Laxmi Warad, Srinivasan Rangarajan, Mikhail Krishtab
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
The native self-alignment of area-selective deposition (ASD) processes makes this technology a promising solution for precise pattern positioning in the EUV era. The key challenge for any ASD process is its defectivity associated with the deposition
Autor:
Shay Wolfling, Joey Hung, Philippe Leray, Frederic Lazzarino, Anne-Laure Charley, Avron Ger, Alain Moussa, Roy Koret, Gayle Murdoch, Sara Paolillo
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Beyond the 5nm technology node, interconnect scaling has an impact on metal material selection: usage of copper may hit a limit with respect to resistance and reliability performance [1]. Thickness of barrier and liner (required for copper) cannot be