Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Roy F. Willis"'
Autor:
Roy F. Willis, Hyosig Won
Publikováno v:
Surface Science. 604:491-495
We report a novel approach for distinguishing surface, bulk and space–charge layer conductivities of metalized semiconductor surfaces. The method employs current injection from the tip of a scanning tunneling microscope and a spring-contact electro
Autor:
Roy F. Willis, Yu Liu
Publikováno v:
Surface Science. 603:2115-2119
The dispersion of sheet plasmons in two-dimensional electron gas (2DEG) systems prepared on Si(1 1 1)-( 3 × 3 )-Ag surface was investigated by angle-resolved high-resolution electron-energy-loss spectroscopy (HREELS) in an in-situ ultrahigh vacuum e
Autor:
Nathaniel Janke-Gilman, Roy F. Willis
Publikováno v:
Journal of Magnetism and Magnetic Materials. :584-587
We report dichroism in angle-resolved X-ray photoemission with linearly polarized synchrotron radiation (MLDAD) of the 3p core levels of the ferromagnetic metals Fe, Ni, and their binary alloys. This technique is characterized by elemental specificit
Autor:
Roy F. Willis, M. Yoon
Publikováno v:
Surface Science. 512:255-261
The adsorption mechanism and the origin of the In-induced surface electronic states of the Si(1 1 1)-(7×7) surface have been studied using bias-dependent scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). At very low In c
Publikováno v:
Applied Surface Science. 166:295-299
Defects present on the Ge(111)-c(2×8) surface and an effect of surface electronic states on the defect-induced perturbation have been studied by scanning tunneling microscopy (STM). The defects exhibit voltage-dependent characteristics in the image.
Publikováno v:
Surface Science. 463:183-190
We have obtained new real-space images of the filled dangling-bond states of the alkali-metal-induced (3×1) reconstruction of the Si(111) surface associated with recently proposed SiSi double-bond surface structures. Our new experimental evidence
Publikováno v:
Surface Science. 463:55-65
We have studied various defects present on the Ge(111)- c (2×8) surface using scanning tunneling microscopy (STM). Images at different bias-voltages reveal defects that appear as voltage-dependent variations in brightness. Empty-state images, in par
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1259-1263
It is shown that the x-ray magnetic linear dichroism (XMLD) in x-ray photoemission signal can be used to monitor the element specific magnetic moments in ultra thin alloy films. Comparison with recent superconducting quantum interference device data
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1488-1491
We present scanning tunneling microscopy (STM) observation of the 3×1 reconstruction of the Ge(111) surface induced by the adsorption of Na and Li. The STM images of the Na- and Li-induced Ge(111)3×1 surfaces reveal substantial differences not only
Absence of double-bond formation on theGe(111)3×1−Nasurface studied by scanning tunneling microscopy
Publikováno v:
Physical Review B. 61:9921-9924
The structure of the Na-induced $3\ifmmode\times\else\texttimes\fi{}1$ reconstruction of the Ge(111) surface has been examined using scanning tunneling microscopy (STM). The STM images reveal significant differences from those of the metal-induced $\