Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Roy Byung Kyu Chung"'
Publikováno v:
ACS Omega, Vol 6, Iss 46, Pp 31292-31298 (2021)
Externí odkaz:
https://doaj.org/article/ee729bed00504bcf9aa291eb4452d48c
Publikováno v:
Micromachines, Vol 12, Iss 12, p 1441 (2021)
AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO2 have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal tre
Externí odkaz:
https://doaj.org/article/d5656ace5b044824aed7fb9559748f74
Publikováno v:
Journal of Materials Science. 57:19882-19891
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab86049306ba3d62856f6adf621c8ed2
https://doi.org/10.1007/s10853-022-07897-z
https://doi.org/10.1007/s10853-022-07897-z
Publikováno v:
Applied Science and Convergence Technology. 31:145-148
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a870f62b65192f4f55003d08c567ba65
https://doi.org/10.5757/asct.2022.31.6.145
https://doi.org/10.5757/asct.2022.31.6.145
Autor:
Ha Young Kang, Min Jae Yeom, Jeong Yong Yang, Yoonho Choi, Jaeyong Lee, Changkun Park, Geonwook Yoo, Roy Byung Kyu Chung
Publikováno v:
Materials Today Physics. 31:101002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef725fe7f6c0fdf2d1b92edc93c443b
https://doi.org/10.1016/j.mtphys.2023.101002
https://doi.org/10.1016/j.mtphys.2023.101002