Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Roy Anunciado"'
Autor:
Roy Anunciado, Jisun Lee, Ellaheh Barzegar, Stefan van der Sanden, Guillaume Schelcher, Stijn Schoofs
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Autor:
Junwei Wei, Patrick Wong, Roy Anunciado, Yongjun Wang, Fuming Wang, Hung Yu Tien, Stefan Hunsche, Peng Tang, Anton van Oosten, Bram Slachter, Koen van Ingen Schenau, Fang Wei, Antonio Corradi
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
We present an experimental study of pattern variability and defectivity, based on a large data set with more than 112 million SEM measurements from an HMI high-throughput e-beam tool. The test case is a 10nm node SRAM via array patterned with a DUV i
Autor:
T. Hasan, Patrick Wong, Bart Segers, Wim Tjibbo Tel, Youping Zhang, C. Prentice, Roy Anunciado
Publikováno v:
SPIE Proceedings.
In the advent of multiple patterning techniques in semiconductor industry, metrology has progressively become a burden. With multiple patterning techniques such as Litho-Etch-Litho-Etch and Sidewall Assisted Double Patterning, the number of processin
Publikováno v:
The Journal of Chemical Physics. 150:064301
We report on calculations—using the LEVEL and BCONT programs by Le Roy, the latter of which is a version modified by B. McGeehan—of the dependence of the radiative lifetime of the Na2 sodium dimer 41Σg+ shelf-state on the initial vibrational and
Autor:
Maria Barkelid, Ye Tian, Roy Anunciado, Justin K. Hanson, Pavan Samudrala, Shawn Lee, Young Ki Kim, Juan-Manuel Gomez, Peter Nikolsky
Publikováno v:
SPIE Proceedings.
As leading edge lithography moves to advanced nodes, CDU requirements have relatively increased with technologies 14nm/20nm and beyond. In this paper, we want to introduce the methodology to offer an itemized CDU budget such as Intra-field, Inter-fie
Autor:
Vadim Timoshkov, Xinjian Zhou, Marinus Jochemsen, Christopher J. Jones, Roy Anunciado, Stefan Hunsche, Neal Callan
Publikováno v:
SPIE Proceedings.
As process window margins for cutting edge DUV lithography continue to shrink, the impact of systematic patterning defects on final yield increases. Finding process window limiting hot spot patterns and monitoring them in high volume manufacturing (H
Autor:
Ewould van West, Jin-Soo Kim, Won-Kwang Ma, Myoung-Soo Kim, Kyu-Tae Sun, Peter Nikolsky, Maryana Escalante Marun, Won-Taik Kwon, Greet Storms, Sungki Park, Marian Otter, Young-Sik Kim, Roy Anunciado
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
In this paper we describe the joint development and optimization of the critical dimension uniformity (CDU) at an advanced 300 mm ArFi semiconductor facility of SK Hynix in the high volume device. As the ITRS CDU specification shrinks, semiconductor
Publikováno v:
The Journal of Chemical Physics. 145:174306
Lifetimes of partially resolved ro-vibrational levels of the Na2 21Σu+ double well state have been measured for the first time. Ground state sodium dimer molecules in a molecular beam are resonantly excited by the doubled output of a 10 ns pulsed dy