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Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same memory uni
Externí odkaz:
http://arxiv.org/abs/2408.09866
Autor:
Kumar, Abhishek, Kalouni, Chirag, Posti, Raghvendra, Malik, Vivek K, Tiwari, Dhananjay, Roy, Debangsu
Magnetic nanotubes have garnered immense attention for their potential in high-density magnetic memory, owing to their stable flux closure configuration and fast, reproducible reversal processes. However, characterizing their magnetic configuration t
Externí odkaz:
http://arxiv.org/abs/2408.09542
Spin-orbit torque (SOT)-based perpendicularly magnetized memory devices with multistate memory have garnered significant interest due to their applicability in low-power in-memory analog computing. However, current methods are hindered by initializat
Externí odkaz:
http://arxiv.org/abs/2408.08641
Autor:
Posti, Raghvendra, Kumar, Abhishek, Baghoria, Mayank, Prakash, Bhanu, Tiwari, Dhananjay, Roy, Debangsu
Type-x device attracts considerable interest in the field of spintronics due to its robust spin-orbit torque (SOT) induced magnetization switching, and easy deposition technique. However, universally applicable and straightforward detection of type-X
Externí odkaz:
http://arxiv.org/abs/2303.14431
Application of sufficient lateral current to a heavy metal (HM) can switch the perpendicular magnetization orientation of adjacent ferromagnetic layer (FM) through spin-orbit torques (SOTs). The choice of the HM and its arrangement plays a major role
Externí odkaz:
http://arxiv.org/abs/2207.01202
Autor:
Roy, Debangsu
When a permanent magnet is considered for an application, the quantity that quantifies the usability of that material is the magnetic energy product (BH)max. In today’s world, rare earth transition metal permanent magnets like Nd-Fe-B, Sm-Co posses
Externí odkaz:
http://hdl.handle.net/2005/3172
http://etd.ncsi.iisc.ernet.in/abstracts/4031/G25651-Abs.pdf
http://etd.ncsi.iisc.ernet.in/abstracts/4031/G25651-Abs.pdf
Autor:
Chen, Yizhang, Cogulu, Egecan, Roy, Debangsu, Ding, Jinjun, Mohammadi, Jamileh Beik, Kotula, Paul G., Missert, Nancy A., Wu, Mingzhong, Kent, Andrew D.
We present a study of the transport properties of thermally generated spin currents in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer over a wide range of temperature. Spin currents generated by the spin Seebeck effect (SSE) in
Externí odkaz:
http://arxiv.org/abs/1906.12288
Akademický článek
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Publikováno v:
Applied Physics Letters 113, 202403 (2018)
We present measurements of the spin Seebeck effect (SSE) by a technique that combines alternating currents (AC) and direct currents (DC). The method is applied to a ferrimagnetic insulator/heavy metal bilayer, Y$_3$Fe$_5$O$_{12}$(YIG)/Pt. Typically,
Externí odkaz:
http://arxiv.org/abs/1808.07813
Autor:
Roy, Debangsu, Frenkel, Yiftach, Davidovitch, Sagi, Persky, Eylon, Haham, Noam, Gabay, Marc, Kalisky, Beena, Klein, Lior
Publikováno v:
Phys. Rev. B 95, 245303, (2017)
The sheet resistance Rs of Ar+ irradiated SrTiO3 in patterns with a length scale of several microns increases significantly below 40 K in connection with driving currents exceeding a certain threshold. The initial lower Rs is recovered upon warming w
Externí odkaz:
http://arxiv.org/abs/1802.01109