Tuning Thermal Induced Porous-Ge Reconstruction for Layer Transfer and Substrate Re-use

Autor: Ahmed Ayari, Bouraoui Ilahi, Roxana Arvinte, Tadeas Hanus, Laurie Mouchel, Denis Machon, Abderraouf Boucherif

Publikováno v: 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::df9c58073e25c2420d18bb3bb8e41079
https://doi.org/10.1109/pvsc48317.2022.9938698

CVD growth of high-quality graphene over Ge (100) by annihilation of thermal pits

Autor: Richard Arès, Roxana Arvinte, Thierno M. O. Diallo, Abderraouf Boucherif, Simon Fafard, Mohammad Reza Aziziyan

Publikováno v: Carbon
Carbon, 2021, 174, pp.214-226. ⟨10.1016/j.carbon.2020.12.024⟩

The physical and chemical state of the underlying germanium (Ge) substrate is crucial for the CVD synthesis of high-quality graphene. Here, we investigate the main causes responsible for formation of pit-like defects on Ge (100) and (111) surfaces, t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f359e6b90dcf51b8e0c2173119ab2cf6
https://hal.archives-ouvertes.fr/hal-03103041

Surface preparation of porous Si-graphene nanocomposites for heteroepitaxy

Autor: Maxime Darnon, Richard Arès, Denis Machon, Mourad Jellite, Mohammad Reza Aziziyan, Abderraouf Boucherif, Roxana Arvinte

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2020, 38 (5), pp.053202. ⟨10.1116/6.0000423⟩

International audience; We have investigated the fabrication process of an alternative approach for a direct integration of epitaxial structures onto a foreign substrate. Our approach is based on the synthesis of a nanocomposite made of graphene-like

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3b15a4e3e8c6b9f1cb8549bae0ced20
https://hal.archives-ouvertes.fr/hal-02947129

Epitaxial lift-off process for III-V solar cells by using porous germanium for substrate re-use

Autor: Alex Brice Poungoué Mbeunmi, Alexandre Heintz, Richard Arès, Abderraouf Boucherif, Samuel Cailleaux, Roxana Arvinte

Publikováno v: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC).

Germanium substrate re-use by porous sacrificial layer appears to be a promising approach for next generation high efficiency III- V solar cells. The morphological evolution of the double porous Ge layer upon ultra-high-vacuum annealing both experime

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b6a97332efc4aacd13f388fc986a0429
https://doi.org/10.1109/pvsc45281.2020.9301028

Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Autor: Marie Laure Locatelli, Pascal Bevilacqua, Luong Viet Phung, Roxana Arvinte, Besar Asllani, Dominique Planson, Hassan Hamad, Christophe Raynaud

Publikováno v: International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017)
International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩

This paper presents OBIC measurements performed at near breakdown voltage on two devices with different JTE doses. Overcurrent has been measured either at the JTE periphery or at the P+ border. Such overcurrent is present due to the electric field en

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36b81a28bfacea0cbc4e39f98a37e79c
https://doi.org/10.4028/www.scientific.net/msf.924.577