Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Rowland C. Clarke"'
Autor:
Ty McNutt, Andris Ezis, S. Van Campen, S. Buchoff, Ranbir Singh, Robert S. Howell, Marc Sherwin, Rowland C. Clarke, H. Hearne
Publikováno v:
IEEE Transactions on Electron Devices. 55:1816-1823
Three large-area 10-kV 4H-SiC DMOSFET designs are compared with respect to their design, die area, breakdown yield, and ON-state yield. The largest of these DMOSFETs had 0.62 cm2 of active area on a 1-cm2 die, with a 10-kV device producing 40 A at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a94157b76efb7561bd52278b3d0c562d
https://doi.org/10.1109/ted.2008.926684
https://doi.org/10.1109/ted.2008.926684
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
Autor:
Ty McNutt, Andris Ezis, Bettina Nechay, S. Van Campen, Marc Sherwin, Robert S. Howell, Rowland C. Clarke, Christopher F. Kirby, Ranbir Singh, S. Buchoff
Publikováno v:
IEEE Transactions on Electron Devices. 55:1807-1815
This paper presents the development and demonstration of large-area 10-kV 4H-SiC DMOSFETs that maintain a classically stable low-leakage normally off subthreshold characteristic when operated at les200degC. This is achieved by an additional growth (e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fd4d56fe17cdbe1d570e756ded2715c
https://doi.org/10.1109/ted.2008.928204
https://doi.org/10.1109/ted.2008.928204
Autor:
G. Augustine, J.D. Oliver, P.M. Esker, R.C. Brooks, R.R. Barron, H. G. Henry, Rowland C. Clarke, A.W. Morse, B.W. Veasel, G. C. DeSalvo
Publikováno v:
IEEE Transactions on Electron Devices. 51:839-845
Previous efforts have revealed instabilities in standard SiC MESFET device electrical characteristics, which have been attributed to charged surface states. This work describes the use of an undoped "spacer" layer on top of a SiC MESFET to form a "bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc3bf2deef015d497bf018d55a48fa3b
https://doi.org/10.1109/ted.2004.828279
https://doi.org/10.1109/ted.2004.828279
Autor:
Rowland C. Clarke, J.W. Palmour
Publikováno v:
Proceedings of the IEEE. 90:987-992
Two SiC transistors that are investigated for microwave power applications are the 4H-SiC static induction transistor (SIT) and the 4H-SiC metal-semiconductor field-effect transistor (MESFET). Ultrahigh frequency 4H-SiC SITs have demonstrated record-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25f726c02c4278de688b983c146cd5f7
https://doi.org/10.1109/jproc.2002.1021563
https://doi.org/10.1109/jproc.2002.1021563
Publikováno v:
physica status solidi (a). 162:441-457
The advantages of SiC for high power, microwave devices are discussed. The design considerations, fabrication, and experimental results are described for SiC MESFETs and SITs. The highest reported f max for a 0.5 μm MESFET using semi-insulating 4H-S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94dded926c9221dcf61b5bff379bc268
https://doi.org/10.1002/1521-396x(199707)162:1<441::aid-pssa441>3.0.co
https://doi.org/10.1002/1521-396x(199707)162:1<441::aid-pssa441>3.0.co
Autor:
M. W. Dashiell, J. R. Gigante, W. J. Malkowski, G. Xuan, Marek Skowronski, James Kolodzey, X. Zhang, Rowland C. Clarke, E. Ansorge, G. C. DeSalvo, J. Liu
Publikováno v:
Applied Physics Letters. 85:2253-2255
Pseudomorphic-strained layers containing from 0.07–1.25atomic% Ge were formed by ion implantation at 1000°C into 4H-SiC substrates. X-ray diffraction revealed high crystalline quality and coherent interfaces for strains up to 1.4%. Infrared reflec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f429242faf6fae264cf154b3605a046
https://doi.org/10.1063/1.1791741
https://doi.org/10.1063/1.1791741
Autor:
Wolfgang J. Choyke, Rowland C. Clarke, C.D. Brandt, J. Greggi, Richard H. Hopkins, S. Sriram, Mchugh James Paul, A.A. Burk, D.L. Barrett, H.M. Hobgood
Publikováno v:
Journal of Crystal Growth. 137:181-186
6H-polytype SiC single crystals with diameters up to 50 mm and lengths up to 75 mm have been grown in the c-and a-axis directions by physical vapor transport (PVT) at growth rates of 0.25 to 1 mm h -1 . Undoped crystals grown from purified source mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763fd3d749653a8928d4997c5563e215
https://doi.org/10.1016/0022-0248(94)91269-6
https://doi.org/10.1016/0022-0248(94)91269-6
Autor:
P.G. McMullin, Mchugh James Paul, D.L. Barrett, H.M. Hobgood, Wolfgang J. Choyke, Rowland C. Clarke, Richard H. Hopkins
Publikováno v:
Journal of Crystal Growth. 128:358-362
We have grown 6H-polytype SiC single crystal boules up to 60 mm in diameter by the physical vapor transport process at 2300 o C. [0001] oriented substrate wafers prepared from these undoped crystals exhibit resistivities of up to 10 5 Ω cm and etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb15310b7d9a764680d4865febf62cf6
https://doi.org/10.1016/0022-0248(93)90348-z
https://doi.org/10.1016/0022-0248(93)90348-z
Autor:
S. Leslie, Eric J. Stewart, Megan McCoy, G.M. Bates, Rowland C. Clarke, Gregory DeSalvo, S. Van Campen, Ty McNutt, A.P. Walker, H.C. Heame
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
We demonstrate an 8 kV, 3 A cascode power switch using SiC VJFETs for both the normally-on and normally-off devices. The normally-on SiC VJFETs have blocking voltages greater than 8 kV at VGS =-50 V pinch-off voltage and on-state currents of more tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03de1b118aabeccd283ee164a514373b
https://doi.org/10.1109/ispsd.2007.4294938
https://doi.org/10.1109/ispsd.2007.4294938
Publikováno v:
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..
Monolithic gallium arsenide vertical FETs have been fabricated with a suspended gate, 0.7 /spl mu/m long, and a drain on top of a vertical pillar 4 /spl mu/m high and 0.3 /spl mu/m thick with a doping concentration of 2 x 10 /sup 17/ cm/sup -3/. VFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbce872b6cf268e724134a59b04773f0
https://doi.org/10.1109/cornel.1987.721242
https://doi.org/10.1109/cornel.1987.721242