Zobrazeno 1 - 10
of 741
pro vyhledávání: '"Rowell, J"'
Autor:
Lee, J., Wyssusek, K.H., Kimble, R.M.N., Way, M., van Zundert, A.A., Cohen, J., Rowell, J., Eley, V.A.
Publikováno v:
In International Journal of Obstetric Anesthesia February 2020 41:7-13
Autor:
Lee, J., Eley, V.A., Wyssusek, K.H., Coonan, E., Way, M., Cohen, J., Rowell, J., van Zundert, A.A.
Publikováno v:
In International Journal of Obstetric Anesthesia May 2019 38:10-18
Autor:
Tarantini, C., Putti, M., Gurevich, A., Shen, Y., Singh, R. K., Rowell, J. M., Newman, N., Larbalestier, D. C., Cheng, Peng, Jia, Ying, Wen, Hai-Hu
Publikováno v:
Phys. Rev. Lett. 104, 087002 (2010)
We report a comprehensive investigation of the suppression of the critical temperature Tc of NdFeAs(OF) single crystal by alpha-particle irradiation. Our data indicate that irradiation defects produce both nonmagnetic and magnetic scattering, resulti
Externí odkaz:
http://arxiv.org/abs/0910.5198
Oxygen was systematically incorporated in MBE grown MgB2 films using in-situ post-growth anneals in an oxygen environment. Connectivity analysis in combination with measurements of the critical temperature and resistivity indicate that oxygen is dist
Externí odkaz:
http://arxiv.org/abs/0809.2297
The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectroscopy was used to monitor changes in oxygen incorporation resulti
Externí odkaz:
http://arxiv.org/abs/0709.4007
Our Rutherford backscattering spectrometry (RBS) study has found that concentrations up to 7 atomic percent of Rb and Cs can be introduced to a depth of ~700 A in MgB2 thin films by annealing in quartz ampoules containing elemental alkali metals at <
Externí odkaz:
http://arxiv.org/abs/0709.4001
MgB2 tunnel junctions (MgB2/barrier/MgB2) were fabricated using a native oxide grown on the bottom MgB2 film as the tunnel barrier. Such barriers therefore survive the deposition of the second electrode at 300oC, even over junction areas of ~1 mm2. S
Externí odkaz:
http://arxiv.org/abs/cond-mat/0604229