Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Roumen Nedev"'
Autor:
Nicol Alejandra Munguía-Fernández, Jhonathan Rafael Castillo-Saenz, Oscar Manuel Perez-Landeros, Roumen Nedev, David Mateos, Judith Paz, Mariel Suárez, Mario Alberto Curiel-Alvarez, Nicola Nedev, Abraham Arias
Publikováno v:
Crystals, Vol 13, Iss 12, p 1672 (2023)
Zinc oxide nanopowder was synthesized by the coprecipitation method. FT-IR and EDS analyses were performed to qualitatively determine the composition of the nanopowder. FE-SEM images revealed the morphology of the nanopowder formed by clusters of nan
Externí odkaz:
https://doaj.org/article/4389101a714f4021875ed9ae6d421049
Autor:
Mario Curiel, Nicola Nedev, Judith Paz, Oscar Perez, Benjamin Valdez, David Mateos, Abraham Arias, Diana Nesheva, Emil Manolov, Roumen Nedev, Valeri Dzhurkov
Publikováno v:
Sensors, Vol 19, Iss 10, p 2277 (2019)
Selective UV sensitivity was observed in Metal-Oxide-Semiconductor structures with Si nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by furnace annealing of SiOx films with x = 1.15 for 60 min in N2 at 1000 and
Externí odkaz:
https://doaj.org/article/48004fd151f444b18283afc0151462b2
Autor:
Diana Nesheva, V Dzhurkov, Roumen Nedev, E. Manolov, Benjamin Valdez, Mario Curiel, J. Paz, N Nedev, David Mateos, Abraham Arias, M. Ramirez, Oscar Perez
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:17412-17421
SiOx layers with x = 1.15 and 1.3 and thicknesses of 50 and 100 nm were deposited on crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were annealed at 250 °C (control samples), while the rest were annealed at temperat
Autor:
Nicola Nedev, Oscar M. Pérez Landeros, Benjamín Valdez Salas, Mario Curiel Alvarez, Abraham Arias Leon, Alejandro Barajas, Roumen Nedev, David Mateos Anzaldo
Publikováno v:
Vacuum. 157:166-172
Gold, copper and gold/copper thin layers were obtained in FIB/SEM system by Focused Ion Beam sputter deposition. Layers deposited on SiO2/Si and quartz substrates were subjected to Rapid Thermal Annealing (RTA) in vacuum at 1100 °C. One minute annea
Autor:
Abraham Arias, Nicola Nedev, Benjamin Valdez, Roumen Nedev, Judith Paz, Diana Nesheva, David Mateos, E. Manolov, V Dzhurkov, Oscar Perez, Mario Curiel
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 19, Iss 10, p 2277 (2019)
Sensors
Volume 19
Issue 10
Sensors, Vol 19, Iss 10, p 2277 (2019)
Sensors
Volume 19
Issue 10
Selective UV sensitivity was observed in Metal-Oxide-Semiconductor structures with Si nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by furnace annealing of SiOx films with x = 1.15 for 60 min in N2 at 1000 and
Autor:
Roumen Nedev, Eduardo Cabrera Cordoba, Benjamín Valdez Salas, Lidia Vargas Osuna, Roberto Luis Ibarra Wiley, Juan José Sevilla García, Maria Amparo Oliveros Ruiz, Michael Schorr Wienner
Publikováno v:
International Journal for Cross-Disciplinary Subjects in Education. 6:2077-2080
The importance of Science, Technology, Engineering and Mathematics (STEM) careers and its role in scientific and technological progress, for economic development in the region, promoted the interest of technological dissemination sessions aimed at pr
Autor:
Roberto Ibarra, Lidia Vargas Osuna, Roumen Nedev, Benjamín Valdez Salas, Juan José Sevilla García, Eduardo Cabrera Cordova, Michael Schorr Wienner, Maria Amparo Oliveros Ruiz
Publikováno v:
Bulletin of Science, Technology & Society. 34:87-93
In the context of technological dissemination sessions aimed at prospective students at the Polytechnic University of Baja California in the city of Mexicali, Baja California, the importance of engineering and its role in scientific and technological
Autor:
Rigoberto Herrera, Mario Curiel, Abraham Arias, Nicola Nedev, David Mateos, E. Manolov, Roumen Nedev, Benjamin Valdez, Alejandro Sánchez Sánchez, Diana Nesheva
Publikováno v:
Key Engineering Materials. 605:384-387
We present results for the effect of visible and UV light on the capacitance-voltage characteristics of a p-type Si based Metal-Oxide-Semiconductor ring-dot structure. It is shown that the structure can be used as a low cost sensor that is simple and
Autor:
Kiril Krezhov, Alexander Mladenov, Diana Nesheva, Nicola Nedev, Z. Levi, E. Manolov, Roumen Nedev, Mario Curiel, Benjamin Valdez
Publikováno v:
Sensor Letters. 10:833-837
Autor:
Z. Levi, Kiril Krezhov, Benjamin Valdez, Roumen Nedev, Alexander Mladenov, E. Manolov, Nicola Nedev, Mario Curiel, Diana Nesheva
Publikováno v:
Key Engineering Materials. 495:120-123
MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying a pulse to the gate electrode. The γ-irradi