Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Rouhollah Feghhi"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 71:2245-2257
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 70:3617-3628
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 70:3257-3268
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 70:2246-2257
Autor:
Karumudi Rambabu, Masum Hossain, Rouhollah Feghhi, Mahdi Alesheikh, Adil Karimov, Fatemeh Modares Sabzevari
Publikováno v:
IEEE Sensors Journal. 22:279-287
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 68:3823-3833
This article presents a design methodology and steps to fabricate a tunable step recovery diode (SRD)-based Gaussian pulse transmitter for ultra-wideband (UWB) radar systems. The method exploits a parallel and series combination of two SRDs which are
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:3773-3782
A design of a hybrid Gaussian pulse transmitter using a transistor-based pulse generator and two pulse-shaping networks, a shorted stub delay circuit and a 90° hybrid coupler, is presented. A transistor-based pulse generator drives the pulse-forming
Autor:
Mojtaba Joodaki, Rouhollah Feghhi
Publikováno v:
AEU - International Journal of Electronics and Communications. 104:119-127
This paper presents the design steps for the fabrication of a hybrid microwave power amplifier (PA) based on fT-doubler technique. The PA is implemented using two 6 W discrete GaN-HEMTs on SiC substrate. The fT-doubler technique is used to enhance th
Publikováno v:
2016 16th Mediterranean Microwave Symposium (MMS).
This paper describes some of the most important design considerations such as: transistor and substrate selection for high power, matching network design and stabilization of microwave power amplifiers with discrete die transistor in X-band frequency
Publikováno v:
2016 16th Mediterranean Microwave Symposium (MMS).
This paper presents the first implementation of hybrid 8.8–9.6 GHz X-band class J power amplifier (PA) designed with a GaN HEMT power transistor. High efficiency power amplifiers suffer from nonlinear performance and relatively low bandwidth. The p