Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Rotem Har Lavan"'
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012164-012164-13 (2012)
We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface. Such behavior is highly unusual for a covalent, narrow bandga
Externí odkaz:
https://doaj.org/article/65b6d79e13724999984be522abab08b8
Autor:
David Cahen, Rotem Har-Lavan
Publikováno v:
IEEE Journal of Photovoltaics. 3:1443-1459
In recent years, conducting and semiconducting polymers such as PEDOT:PSS and P3HT have become commercially available, and as a result, a new type of polymer/Si heterostructure solar cell is emerging. With a conducting polymer (a degenerate semicondu
Autor:
Hagay Shpaisman, David Cahen, Ayelet Vilan, Rotem Har-Lavan, Nir Stein, Omer Yaffe, Roman Korobko, Oliver Seitz
Publikováno v:
Advanced Functional Materials. 20:2181-2188
Using a semiconductor as the substrate to a molecular organic layer, penetration of metal contacts can be clearly identified by the study of electronic charge transport through the layer. A series of monolayers of saturated hydrocarbon molecules with
Autor:
Ayelet Vilan, Abd-Elrazek Haj-Yahya, Wenjie Li, Robert Lovrincic, Rotem Har-Lavan, Olga Kraynis, David Cahen
Publikováno v:
The journal of physical chemistry letters. 4(3)
Thermally evaporated Pb preserves the electronic properties of an organic monolayer (ML) on Si and surface passivation of the Si surface itself. The obtained current–voltage characteristics of Pb/ML/Si junctions agree with results obtained with the
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
We describe a hybrid inorganic-organic solar cell, wherein the n-Si absorber interface is chemically passivated and electrically contacted by a conductive polymer, PEDOT:PSS. In this structure, which is completely fabricated from its components at ro
Autor:
Sreenivasa Reddy Puniredd, Ariel Biller, Ayelet Vilan, Hagay Shpaisman, Hossam Haick, Nir Stein, Han Zuilhof, David Cahen, Luc Scheres, Rotem Har Lavan, Omer Yaffe
Publikováno v:
Nano Letters, 9(6), 2390-2394
Nano Letters 9 (2009) 6
Nano Letters 9 (2009) 6
Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0178e5a48dd3b1cd8aa929a65c5764cb
https://research.wur.nl/en/publications/molecular-electronics-at-metalsemiconductor-junctions-si-inversio
https://research.wur.nl/en/publications/molecular-electronics-at-metalsemiconductor-junctions-si-inversio
Publikováno v:
Photonics for Solar Energy Systems II.
Using a dense organic monolayer, self-assembled and directly bound to n-Si, as high quality insulator with a thickness that can be varied from 1.5-2.5 nm, we construct a Metal-Organic Insulator-Semiconductor (MOIS) structure, which, if fabricated wit
Autor:
Arnon Arbel, Tony Brewer, Lisa Koenigsberg, Guy Matmon, Daniel Majer, Jacob Vecht, Thomas C. McDermott, Shlomo Ruschin, Harel Shfaram, Jeff Levy, Eyal Shekel, Rotem Har-Lavan, Amir Geron
Publikováno v:
SPIE Proceedings.
We report here a scalable, multichassis, 6.3 terabit core router, which utilizes our proprietary optical switch. The router is commercially available and deployed in several customer sites. Our solution combines optical switching with electronic rout
Publikováno v:
Journal of Applied Physics. 113:084909
The quinhydrone/methanol treatment has been reported to yield outstanding passivation of the H-terminated Si(100) surface. Here, we report on the mechanism of this process by comparing the resulting surface to that of freshly etched H-terminated Si,
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012164-012164-13 (2012)
We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface. Such behavior is highly unusual for a covalent, narrow bandga