Výsledky vyhledávání - "Rostislav Velichko"

Akademický článek

Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications

Autor: Rostislav Velichko, Yusaku Magari, Mamoru Furuta

Publikováno v: Materials, Vol 15, Iss 1, p 334 (2022)

Low-temperature activation of oxide semiconductor materials such as In-Ga-Zn-O (IGZO) is a key approach for their utilization in flexible devices. We previously reported that the activation temperature can be reduced to 150 °C by hydrogen-doped IGZO

Externí odkaz: https://doaj.org/article/4d808f57d70349e3bea241a5e67851e6

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7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization

Autor: Rostislav Velichko, Mamoru Furuta, Daiki Tanaka, Yuki Tsuruma, Toshihiro Matsumura, Daichi Sasaki, Taiki Kataoka, Yusaku Magari, Emi Kawashima, Kenta Shimpo

Publikováno v: SID Symposium Digest of Technical Papers. 52:69-72

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ca60bdd2d24118b3e1f7e3391c1664e
https://doi.org/10.1002/sdtp.14612

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Investigation of the effect of adding a moderate amount of hydrogen on the properties of tin oxide films deposited by DC magnetron sputtering

Autor: Rostislav Velichko, Hisao Makino, Yusaku Magari, Mamoru Furuta

Publikováno v: Japanese Journal of Applied Physics. 60:055503

We investigated the effect of adding small amounts of hydrogen during DC magnetron sputtering of SnO x films followed by annealing in a nitrogen atmosphere at temperatures below the instability of SnO. Hard X-ray photoelectron spectroscopy analysis s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d08757e5b06f4263c7cff58250ed1c26
https://doi.org/10.35848/1347-4065/abf49d

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