Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Rostan Rodrigues"'
Publikováno v:
2023 IEEE PES Grid Edge Technologies Conference & Exposition (Grid Edge).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe4958c819bb24c3af2f7c58c5d11408
https://doi.org/10.1109/gridedge54130.2023.10102738
https://doi.org/10.1109/gridedge54130.2023.10102738
Publikováno v:
IEEE Transactions on Industry Applications. 57:1920-1927
This article investigates the design of a 1 kV, 5 kA solid-state circuit breaker by using parallel connection of reverse blocking IGCTs (RB-IGCT). The presented breaker topology is based on the parallel connection of low conduction loss RB-IGCTs whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4afd51cf816fef4e2084f505c344d50
https://doi.org/10.1109/tia.2021.3062591
https://doi.org/10.1109/tia.2021.3062591
Autor:
Yuzhi Zhang, Antonello Antoniazzi, Rostan Rodrigues, Luca Raciti, Utkarsh Raheja, Pietro Cairoli
Publikováno v:
2021 IEEE Electric Ship Technologies Symposium (ESTS).
Recent developments in maritime vessels have seen a continuous drive towards All-electric Ships (AES). DC distribution enables highly efficient integration of primary storage, energy storage and loads in confined spaces. However, ensuring reliable fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c44ba1bc2c6b0df26dc4eb1d1e2a8cd
https://doi.org/10.1109/ests49166.2021.9512345
https://doi.org/10.1109/ests49166.2021.9512345
Autor:
Yuzhi Zhang, Utkarsh Raheja, Antonello Antoniazzi, Rostan Rodrigues, Pietro Cairoli, Luca Raciti
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
The proliferation of high efficiency, high current DC distribution systems is held back by the limited choices when it comes to solid-state circuit breakers. With this work, we investigated the parallel connection of Reverse Blocking IGCTs (RB-IGCT)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9f3fe947bbc3ee8ffe0cc7bc15b4f45
https://doi.org/10.1109/ecce44975.2020.9235967
https://doi.org/10.1109/ecce44975.2020.9235967
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
This paper presents the accelerated ageing test results of solid-state circuit breaker based on the 2.5 kV Reverse Blocking IGCT (RB-IGCT). Solid-State Circuit Breakers (SSCB) are protection and safety devices and must have high reliability, especial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::587ea6000e3019aeef9341cdb97f359a
https://doi.org/10.1109/ecce44975.2020.9235953
https://doi.org/10.1109/ecce44975.2020.9235953
Publikováno v:
IAS
This paper investigates the design of 1 kV, 5 kA solid state circuit breaker by using parallel connection of Reverse Blocking IGCTs (RB-IGCT). The presented breaker topology is based on the parallel connection of low conduction loss RB-IGCTs which de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b41fb2dfcc78c998d8e57fa0e7d67fe
https://doi.org/10.1109/ias44978.2020.9334797
https://doi.org/10.1109/ias44978.2020.9334797
Publikováno v:
Materials Science Forum. 924:818-821
An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f0b7ba58dc103ec28eeba8a128ae4a5
https://doi.org/10.4028/www.scientific.net/msf.924.818
https://doi.org/10.4028/www.scientific.net/msf.924.818
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Using SiC freewheeling diodes with Si IGBTs is a typical cost-effective alternative to full-SiC power electronics. The benefit of SiC JBS diodes in switching losses reduction, due to zero reverse recovery, has been widely reported in literature. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33613d001e968fd8ac923595cbe22425
https://doi.org/10.1109/wipda46397.2019.8998944
https://doi.org/10.1109/wipda46397.2019.8998944
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
When using Wide Band-gap Power Semiconductor Devices in power control and protection apparatus, the packaging of these devices faces unique challenges. These challenges include expected high overcurrent (for example, eight times nominal current, resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e2b55eaaee8b5d666399013ddc38569
https://doi.org/10.1109/wipda46397.2019.8998813
https://doi.org/10.1109/wipda46397.2019.8998813
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Growing commercialization of SiC JFETs with low conduction losses is enabling their potential in non-traditional application spaces such as AC switchgear and controlgear. However, a key performance requirement such as surge current capability of thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2de949fbe022dec2a2092bc6456b1fb7
https://doi.org/10.1109/wipda46397.2019.8998815
https://doi.org/10.1109/wipda46397.2019.8998815