Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Rossler C"'
Publikováno v:
Phys. Rev. B 94, 195428 (2016)
Numerous experimental and theoretical studies have focused on low-dimensional systems locally perturbed by the biased tip of a scanning force microscope. In all cases either open or closed weakly gate-tunable nanostructures have been investigated, su
Externí odkaz:
http://arxiv.org/abs/1611.06274
Publikováno v:
Phys. Rev. B 89, 245408 (2014)
By placing the biased tip of an atomic force microscope at a specific position above a semiconductor surface we can locally shape the potential landscape. Inducing a local repulsive potential in a two dimensional electron gas near a quantum point con
Externí odkaz:
http://arxiv.org/abs/1401.8207
Publikováno v:
New Journal of Physics 12 (2010) 043007
We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can
Externí odkaz:
http://arxiv.org/abs/1002.3450
Publikováno v:
Solid State Communications 150 (2010) 861-864
We present a versatile design of freely suspended quantum point contacts with particular large one-dimensional subband quantization energies of up to 10meV. The nanoscale bridges embedding a two-dimensional electron system are fabricated from AlGaAs/
Externí odkaz:
http://arxiv.org/abs/0905.3969
Autor:
Hof, K. -D., Rossler, C., Manus, S., Kotthaus, J. P., Holleitner, A. W., Schuh, D., Wegscheider, W.
We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima
Externí odkaz:
http://arxiv.org/abs/0810.0970
Autor:
Hof, K. -D., Rossler, C., Manus, S., Kotthaus, J. P., Holleitner, A. W., Schuh, D., Wegscheider, W.
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as ma
Externí odkaz:
http://arxiv.org/abs/0806.1110
Autor:
Rossler, C., Hof, K. -D., Manus, S., Ludwig, S., Kotthaus, J. P., Simon, J., Holleitner, A. W., Schuh, D., Wegscheider, W.
Publikováno v:
Appl. Phys. Lett. 93, 071107 (2008)
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the dev
Externí odkaz:
http://arxiv.org/abs/0805.2230
Publikováno v:
Nanotechnology 19, 16 (2008)
Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of
Externí odkaz:
http://arxiv.org/abs/0802.4383
Autor:
Neubauer, J., Sowoidnich, T., Valentini, L., Schulbert, C., Naber, C., Rossler, C., Dasilva, J., Bellmann, F.
Publikováno v:
Cement and Concrete Research. 156:106769
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1ab914be3f393e6c5b5c7b368ff8034
https://doi.org/10.1016/j.cemconres.2022.106769
https://doi.org/10.1016/j.cemconres.2022.106769
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