Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Rossella Brunetti"'
Autor:
Rossella Brunetti, Massimo Rudan
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db464023d05da242934f9c265db4c1f6
https://hdl.handle.net/11380/1306329
https://hdl.handle.net/11380/1306329
The Numerov process is a solution method applicable to some classes of differential equations, that provides an error term of the fifth order in the grid size with a computational cost comparable to that of the finitedifference scheme. In the origina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a572e6966c3a4d3d5e7751ec60a528c4
https://doi.org/10.21203/rs.3.rs-229482/v1
https://doi.org/10.21203/rs.3.rs-229482/v1
Autor:
Massimo Rudan, Rossella Brunetti
The Numerov Process (NP) provides the solution of some classes of ODEs with an accuracy much superior to that of the standard finite-difference or box-integration methods. The original formulation of NP requires a uniform grid, which is a drawback fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24fc73ecf2c555df3943e9f5d386a5bc
https://hdl.handle.net/11380/1262917
https://hdl.handle.net/11380/1262917
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications.Nearly 100 leading scientists from industry and academia were selected to w
The role of the extended (band) states in determining the electric switching of chalcogenide materials in the amorphous phase is here analysed by means of a theoretical/simulative approach which accounts for both mobile and localised states. This goa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ed3e30354f4b3cff4ba6c44adbe2c0d
https://hdl.handle.net/11380/1222585
https://hdl.handle.net/11380/1222585
The one-dimensional form of some types of differential equations that appear in the modeling of solid-state devices, like, e.g., the Poisson and Schrödinger equations, can be solved numerically using the Numerov Process (NP). The accuracy of NP is s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9e021765288aebeb36da665f48b02df
https://hdl.handle.net/11380/1226792
https://hdl.handle.net/11380/1226792
Publikováno v:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The stochastic nature of the switching mechanism of amorphous phase-change memory (PCM) arrays can fruitfully be exploited to implement primitives for hardware security. This paper tackles, by means of PCM, the feasibility of Reconfigurable Physical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::174a0f42d03b34d42bc72d258979343b
https://doi.org/10.23919/sispad.2017.8085316
https://doi.org/10.23919/sispad.2017.8085316
The stochastic nature of the switching mechanism of phase-change memory (PCM) arrays, which is a drawback for memory applications, can fruitfully be exploited to implement primitives for hardware security. By applying a set voltage pulse, whose ampli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79be77819f696b2889dff0cbd08ba284
http://hdl.handle.net/11585/585964
http://hdl.handle.net/11585/585964
The transport scaling limits of Ovonic devices are studied by means of a numerical solution of a time- and space-dependent transport model based on a set of equations that provide a good physical grasp of the microscopic process in hand. The predicti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::013fe9ad101b90f4688b09fb8897be81
http://hdl.handle.net/11585/615675
http://hdl.handle.net/11585/615675
A time- and space-dependent 1D model including the self-consistent solution of the Poisson equation is presented to study the electric response of nanometer Ovonic samples. The model accounts for the main features of the relevant microscopic processe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ff8018f6872afce10b1f74cdc7022c2
http://hdl.handle.net/11585/611467
http://hdl.handle.net/11585/611467