Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Rossella, Piagge"'
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 890-899 (2018)
In this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphologic
Externí odkaz:
https://doaj.org/article/b1c7630648114d29a1992ed7aff863c3
Autor:
Giuseppe Croce, Eleonora Gevinti, Antonio Andreini, Isabella Rossetto, Rossella Piagge, Luca Merlo, L. Di Biccari, A. Milani, Gabriella Ghidini, Lorenzo Cerati, Fabrizio Fausto Renzo Toia
This paper discusses the transmission line pulse (TLP) analysis, generally used for electrostatic discharge (ESD) device characterization, as high potential usable tool also for non-ESD structures. TLP technique, combined with DC and pulsed I-V chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::257a9a59889cca6a8425816fc72ff437
http://arxiv.org/abs/2002.08716
http://arxiv.org/abs/2002.08716
Publikováno v:
Beilstein journal of nanotechnology 9 (2018): 890–899. doi:10.3762/bjnano.9.83
info:cnr-pdr/source/autori:Vangelista, Silvia; Piagge, Rossella; Ek, Satu; Lamperti, Alessio/titolo:Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition/doi:10.3762%2Fbjnano.9.83/rivista:Beilstein journal of nanotechnology/anno:2018/pagina_da:890/pagina_a:899/intervallo_pagine:890–899/volume:9
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 890-899 (2018)
info:cnr-pdr/source/autori:Vangelista, Silvia; Piagge, Rossella; Ek, Satu; Lamperti, Alessio/titolo:Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition/doi:10.3762%2Fbjnano.9.83/rivista:Beilstein journal of nanotechnology/anno:2018/pagina_da:890/pagina_a:899/intervallo_pagine:890–899/volume:9
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 890-899 (2018)
In this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphologic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49dac77df597681013e99af72567354f
http://www.cnr.it/prodotto/i/431695
http://www.cnr.it/prodotto/i/431695
Publikováno v:
Beilstein Journal of Nanotechnology
In this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphologic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0d7e6e9d984cf1c1cf5115463025e964
https://pubmed.ncbi.nlm.nih.gov/29600150
https://pubmed.ncbi.nlm.nih.gov/29600150
Publikováno v:
MRS Advances 2 (2017): 3005–3010. doi:10.1557/adv.2017.404
info:cnr-pdr/source/autori:Vangelista, Silvia; Piagge, Rossella; Ek, Satu; Sarnet, Tiina; Ghidini, Gabriella; Lamperti, Alessio/titolo:Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties/doi:10.1557%2Fadv.2017.404/rivista:MRS Advances/anno:2017/pagina_da:3005/pagina_a:3010/intervallo_pagine:3005–3010/volume:2
info:cnr-pdr/source/autori:Vangelista, Silvia; Piagge, Rossella; Ek, Satu; Sarnet, Tiina; Ghidini, Gabriella; Lamperti, Alessio/titolo:Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties/doi:10.1557%2Fadv.2017.404/rivista:MRS Advances/anno:2017/pagina_da:3005/pagina_a:3010/intervallo_pagine:3005–3010/volume:2
Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation along crys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddff39f7399f47ce1513392e146a533f
https://publications.cnr.it/doc/431701
https://publications.cnr.it/doc/431701
Autor:
Sabina Spiga, Alessio Lamperti, Gabriella Ghidini, Riina Ritasalo, Paivi Jarvinen, Isabella Rossetto, Fabrizio Fausto Renzo Toia, Rossella Piagge, S. Vangelista
Publikováno v:
Journal of Vacuum Science & Technology B 37 (2019): 021205-1–021205-5. doi:10.1116/1.5060712
info:cnr-pdr/source/autori:Rossetto, Isabella; Piagge, Rossella; Toia, Fabrizio; Spiga, Sabina; Lamperti, Alessio; Vangelista, Silvia; Ritasalo, Riina; Jarvinen, Paivi; Ghidini, Gabriella/titolo:Impact of annealing on the current conduction and trap properties of CeO2%2FLa2O3 metal-insulator-metal capacitors/doi:10.1116%2F1.5060712/rivista:Journal of Vacuum Science & Technology B/anno:2019/pagina_da:021205-1/pagina_a:021205-5/intervallo_pagine:021205-1–021205-5/volume:37
info:cnr-pdr/source/autori:Rossetto, Isabella; Piagge, Rossella; Toia, Fabrizio; Spiga, Sabina; Lamperti, Alessio; Vangelista, Silvia; Ritasalo, Riina; Jarvinen, Paivi; Ghidini, Gabriella/titolo:Impact of annealing on the current conduction and trap properties of CeO2%2FLa2O3 metal-insulator-metal capacitors/doi:10.1116%2F1.5060712/rivista:Journal of Vacuum Science & Technology B/anno:2019/pagina_da:021205-1/pagina_a:021205-5/intervallo_pagine:021205-1–021205-5/volume:37
This paper focuses on the impact of annealing on the current conduction and trap states of metal-insulator-metal capacitors with CeO2/La2O3 dielectrics. Capacitance-frequency measurements identify two main trap levels (T1 and T2), characterized by an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87c512a9f0ffc511e9518988a95c81ac
https://doi.org/10.1116/1.5060712
https://doi.org/10.1116/1.5060712
Autor:
Rossella Piagge, Enrico Bellandi, Angelo Claudio Nale, Annalisa Del Vitto, Massimo Caniatti, Mauro Alessandri
Publikováno v:
Microelectronic Engineering. 85:2406-2410
The physical and structural evolution of alumina films deposited by ALCVD annealed at high temperatures in N"2 has been studied. Low temperature post deposition treatments in NH"3 (PDN) have been performed to evaluate the impact of nitrogen incorpora
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0e859dad6b7e76d360938d8e46aa1db
https://doi.org/10.1016/j.mee.2008.09.010
https://doi.org/10.1016/j.mee.2008.09.010
Autor:
Francesco Pipia, Rossella Piagge, Annamaria Votta, Enrico Bellandi, Massimo Caniatti, Mauro Alessandri
Publikováno v:
Solid State Phenomena. 134:63-66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27898dbb261e83bd911ea49dcc99d875
https://doi.org/10.4028/www.scientific.net/ssp.134.63
https://doi.org/10.4028/www.scientific.net/ssp.134.63
Autor:
Jan Willem Maes, Claudia Scozzari, Mauro Alessandri, Massimo Caniatti, Gabriella Ghidini, Alessandro Sebastiani, S. Grasso, Rossella Piagge, G. Pavia, Enrica Ravizza, Francesca Sammiceli, Annalisa Del Vitto, Christophe F. Pomarede, Simona Spadoni, Claudia Wiemer
Publikováno v:
ECS Transactions. 11:497-508
Due to the continuous scaling down of equivalent oxide thickness requested for inter-poly dielectric material in the next technology nodes, the Oxide-Nitride-Oxide structure is not able anymore to guarantee charge retention because of high leakage cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd6da334aab53444e27bd0eeffa58e57
https://doi.org/10.1149/1.2779585
https://doi.org/10.1149/1.2779585
Publikováno v:
Microelectronics Reliability. 47:598-601
Aim of this work is to investigate the conduction characteristics of different high-K dielectrics deposited by ALD technique. A novel methodology which allows the evaluation of very low leakage current at least two-orders lower than standard I – V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3adea3e5d15bbcdb41d1b37f07cbaf57
https://doi.org/10.1016/j.microrel.2007.01.045
https://doi.org/10.1016/j.microrel.2007.01.045