Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Ross, Richard S."'
Autor:
Barnes, Edwin, Bennett, Michael B., Boltasseva, Alexandra, Borish, Victoria, Brown, Bennett, Carr, Lincoln D., Ceballos, Russell R., Dukes, Faith, Easton, Emily W., Economou, Sophia E., Edwards, E. E., Finkelstein, Noah D., Fracchiolla, C., Franklin, Diana, Freericks, J. K., Goss, Valerie, Hannum, Mark, Holincheck, Nancy, Kelly, Angela M., Lanes, Olivia, Lewandowski, H. J., Matsler, Karen Jo, Mercurio, Emily, Montaño, Inès, Murdock, Maajida, Peltz, Kiera, Perron, Justin K., Richardson, Christopher J. K., Rosenberg, Jessica L., Ross, Richard S., Ryu, Minjung, Samuel, Raymond E., Schrode, Nicole, Schwamberger, Susan, Searles, Thomas A., Singh, Chandralekha, Tingle, Alexandra, Zwickl, Benjamin M.
In response to numerous programs seeking to advance quantum education and workforce development in the United States, experts from academia, industry, government, and professional societies convened for a National Science Foundation-sponsored worksho
Externí odkaz:
http://arxiv.org/abs/2410.23460
Autor:
Anderson, Christopher R., Gyure, Mark F., Quinn, Sam, Pan, Andrew, Ross, Richard S., Kiselev, Andrey A.
Publikováno v:
AIP Advances 12, 065123 (2022)
In this paper we present a computational procedure that utilizes real-space grids to obtain high precision approximations of electrostatically confined few-electron states such as those that arise in gated semiconductor quantum dots. We use the Full
Externí odkaz:
http://arxiv.org/abs/2203.00082
Autor:
Chen, Edward H., Raach, Kate, Pan, Andrew, Kiselev, Andrey A., Acuna, Edwin, Blumoff, Jacob Z., Brecht, Teresa, Choi, Maxwell, Ha, Wonill, Hulbert, Daniel, Jura, Michael P., Keating, Tyler, Noah, Ramsey, Sun, Bo, Thomas, Bryan J., Borselli, Matthew, Jackson, C. A. C., Rakher, Matthew T., Ross, Richard S.
Publikováno v:
Phys. Rev. Applied 15, 044033 (2021)
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device perf
Externí odkaz:
http://arxiv.org/abs/2010.04818
Autor:
Pan, Andrew, Keating, Tyler E., Gyure, Mark F., Pritchett, Emily J., Quinn, Samuel, Ross, Richard S., Ladd, Thaddeus D., Kerckhoff, Joseph
Publikováno v:
Quantum Sci. Technol. 5 (2020) 034005
Triple quantum dots (TQDs) are promising semiconductor spin qubits because of their all-electrical control via fast, tunable exchange interactions and immunity to global magnetic fluctuations. These qubits can experience strong transverse interaction
Externí odkaz:
http://arxiv.org/abs/2001.09240
Autor:
Kim, Danny, Kiselev, Andrey A., Ross, Richard S., Rakher, Matthew T., Jones, Cody, Ladd, Thaddeus D.
Publikováno v:
Phys. Rev. Applied 5, 024014 (2016)
We propose and analyze an optically loaded quantum memory exploiting capacitive coupling between self-assembled quantum dot molecules and electrically gated quantum dot molecules. The self-assembled dots are used for spin-photon entanglement, which i
Externí odkaz:
http://arxiv.org/abs/1505.01540
Autor:
Borselli, Matthew G., Eng, Kevin, Ross, Richard S., Hazard, Thomas M., Holabird, Kevin S., Huang, Biqin, Kiselev, Andrey A., Deelman, Peter W., Warren, Leslie D., Milosavljevic, Ivan, Schmitz, Adele E., Sokolich, Marko, Gyure, Mark F., Hunter, Andrew T.
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual q
Externí odkaz:
http://arxiv.org/abs/1408.0600
Autor:
Borselli, Matthew G., Eng, Kevin, Croke, Edward T., Maune, Brett M., Huang, Biqin, Ross, Richard S., Kiselev, Andrey A., Deelman, Peter W., Alvarado-Rodriguez, Ivan, Schmitz, Adele E., Sokolich, Marko, Holabird, Kevin S., Hazard, Thomas M., Gyure, Mark F., Hunter, Andrew T.
Publikováno v:
Appl. Phys. Lett. 99, 063109 (2011)
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm tha
Externí odkaz:
http://arxiv.org/abs/1106.6285
Autor:
Borselli, Matthew G., Ross, Richard S., Kiselev, Andrey A., Croke, Edward T., Holabird, Kevin S., Deelman, Peter W., Warren, Leslie D., Alvarado-Rodriguez, Ivan, Milosavljevic, Ivan, Ku, Fiona C., Wong, Wah S., Schmitz, Adele E., Sokolich, Marko, Gyure, Mark F., Hunter, Andrew T.
Publikováno v:
Appl. Phys. Lett. 98, 123118 (2011)
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-
Externí odkaz:
http://arxiv.org/abs/1012.1363
Autor:
Hayes, Robert R., Kiselev, Andrey A., Borselli, Matthew G., Bui, Steven S., Croke III, Edward T., Deelman, Peter W., Maune, Brett M., Milosavljevic, Ivan, Moon, Jeong-Sun, Ross, Richard S., Schmitz, Adele E., Gyure, Mark F., Hunter, Andrew T.
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified th
Externí odkaz:
http://arxiv.org/abs/0908.0173