Zobrazeno 1 - 10
of 333
pro vyhledávání: '"Roskos, Hartmut G."'
In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs, graphene, etc.)
Externí odkaz:
http://arxiv.org/abs/2405.18764
Terahertz (THz) imaging is one of the hotspots in the field of optics, where the depth information retrieval is a key factor to restore the three-dimensional appearance of objects. Impressive results for depth extraction in visible and infrared wave
Externí odkaz:
http://arxiv.org/abs/2405.18317
Autor:
Krysl, Anastasiya, But, Dmytro B., Ikamas, Kęstutis, Holstein, Jakob, Shevchik-Shekera, Anna, Roskos, Hartmut G., Lisauskas, Alvydas
This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect transistors with mon
Externí odkaz:
http://arxiv.org/abs/2404.07715
Autor:
Meng, Fanqi, Tang, Zhenling, Ourednik, Petr, Hazarika, Jahnabi, Feiginov, Michael, Suzuki, Safumi, Roskos, Hartmut G.
Resonant tunneling diode (RTD) oscillators possess the highest oscillation frequency among all electronic THz emitters. However, the emitted power from RTDs remains limited. Here, we propose linear RTD-oscillator arrays capable of supporting coherent
Externí odkaz:
http://arxiv.org/abs/2404.07394
Autor:
Holstein, Jakob, North, Nicholas K., Horbury, Michael D., Kondawar, Sanchit, Kundu, Imon, Salih, Mohammed, Krysl, Anastasiya, Li, Lianhe, Linfield, Edmund H., Freeman, Joshua R., Valavanis, Alexander, Lisauskas, Alvydas, Roskos, Hartmut G.
Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10~THz) that can operate at room temperature. We conducted experimental characterizations of a single patch-
Externí odkaz:
http://arxiv.org/abs/2404.07309
We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two models --
Externí odkaz:
http://arxiv.org/abs/2404.06790
Autor:
Caridad, José M., Castelló, Óscar, Baptista, Sofía M. López, Taniguchi, Takashi, Watanabe, Kenji, Roskos, Hartmut G., Delgado-Notario, Juan A.
Publikováno v:
Nano Lett. 2024
Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable phototrans
Externí odkaz:
http://arxiv.org/abs/2401.04005
Autor:
Cao, Lei, Meng, Fanqi, Özdemir, Esra, Loth, Yannik, Richter, Merle, Wigger, Anna Katharina, Sosa, Maira Pérez, Jumaah, Alaa Jabbar, Al-Daffaie, Shihab, Bolívar, Peter Haring, Roskos, Hartmut G.
Publikováno v:
Photonics Research, Vol. 12, Issue 6, pp. 1115-1128 (2024)
Designing terahertz sensors with high sensitivity to detect nanoscale thin films and single biomolecule presents a significant challenge, and addressing these obstacles is crucial for unlocking their full potential in scientific research and advanced
Externí odkaz:
http://arxiv.org/abs/2311.14493
Autor:
Ludwig, Florian, Generalov, Andrey, Holstein, Jakob, Murros, Anton, Viisanen, Klaara, Prunnila, Mika, Roskos, Hartmut G.
Field-effect transistors coupled to integrated antennas (TeraFETs) are photodetectors being actively developed for the THz frequency range ($\sim$ 100 GHz - 10 THz). Among them, Graphene TeraFETs (G-TeraFETs) have demonstrated distinctive photorespon
Externí odkaz:
http://arxiv.org/abs/2311.12382
Autor:
Warawa, Konstantin, Agarmani, Yassine, Schubert, Harald, Dressel, Martin, Lang, Michael, Roskos, Hartmut G., Thomson, Mark D.
We investigate experimentally the ultrafast changes in the spectral response of the Mott insulator $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Cl ($\kappa$-Cl) upon photodoping with intense excitation at 1.6 eV and probing with continuum pulses simultaneousl
Externí odkaz:
http://arxiv.org/abs/2310.18761