Zobrazeno 1 - 10
of 153
pro vyhledávání: '"Roshchupkin, D.V."'
Publikováno v:
In Journal of Materials Processing Tech. February 2017 240:60-67
Autor:
Vyatkin, A.F., Zinenko, V.I., Agaphonov, Yu.A., Pustovit, A.N., Roshchupkin, D.V., Reuss, F., Kirchner, C., Kling, R., Waag, A.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B August 2005 237(1-2):179-182
Autor:
Zinenko, V.I., Agafonov, Yu.A., Saraykin, V.V., Eremenko, V.G., Roshchupkin, D.V., Sedlovets, D.M.
Publikováno v:
In Materials Letters 15 December 2018 233:115-117
Autor:
Avrutin, V.S., Izyumskaya, N.F. *, Vyatkin, A.F., Zinenko, V.I., Agafonov, Yu.A., Irzhak, D.V., Roshchupkin, D.V., Steinman, E.A., Vdovin, V.I., Yugova, T.G.
Publikováno v:
In Materials Science & Engineering B 2003 100(1):35-39
Autor:
Avrutin, V.S, Izyumskaya, N.F *, Vyatkin, A.F, Zinenko, V.I, Agafonov, Yu.A, Irzhak, D.V, Roshchupkin, D.V, Steinman, E.A, Vdovin, V.I, Yugova, T.G
Publikováno v:
In Materials Science & Engineering B 2002 89(1):350-354
Autor:
Schelokov, I.A. a, Roshchupkin, D.V. a, *, Kondakov, A.S. a, Irzhak, D.V. a, Brunel, M. b, Tucoulou, R. c
Publikováno v:
In Optics Communications 1999 159(4):278-284
Autor:
KONONENKO O.V., MATVEEV V.N., FIELD D.P., MATVEEV D.V., BOZHKO S.I., ROSHCHUPKIN D.V., VDOVIN E.E., BARANOV A.N.
Publikováno v:
Наносистемы: физика, химия, математика.
Graphene films were synthesized by the low-pressure no flow CVD on polycrystalline nickel catalyst films grown by the self-ion assisted deposition technique at different biases. Graphene films were transferred to a SiO 2/Si substrate using PMMA. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2806::44bb14604549b07b07784786a88ab06d
http://cyberleninka.ru/article/n/investigation-of-structure-and-transport-properties-of-graphene-grown-by-low-pressure-no-flow-cvd-on-polycrystalline-ni-films
http://cyberleninka.ru/article/n/investigation-of-structure-and-transport-properties-of-graphene-grown-by-low-pressure-no-flow-cvd-on-polycrystalline-ni-films
Publikováno v:
Journal of applied physics 97 (2005): 113505–113505.
info:cnr-pdr/source/autori:Tucoulou R., Mathon O., Ferrero C., Mocella V., Roshchupkin D.V., Kumon R.E./titolo:Investigation of surface acoustic wave fields in silicon crystals by x-ray diffraction: A dynamical theory approach/doi:/rivista:Journal of applied physics/anno:2005/pagina_da:113505/pagina_a:113505/intervallo_pagine:113505–113505/volume:97
info:cnr-pdr/source/autori:Tucoulou R., Mathon O., Ferrero C., Mocella V., Roshchupkin D.V., Kumon R.E./titolo:Investigation of surface acoustic wave fields in silicon crystals by x-ray diffraction: A dynamical theory approach/doi:/rivista:Journal of applied physics/anno:2005/pagina_da:113505/pagina_a:113505/intervallo_pagine:113505–113505/volume:97
X-ray diffraction spectra at different x-ray energies from a Si crystal subjected to a deformation produced by surface acoustic wave propagation have been modeled using the general framework of dynamical diffraction theory. The simulations have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::de34498873808b1109e40bdf0bfd9c1a
http://www.cnr.it/prodotto/i/35659
http://www.cnr.it/prodotto/i/35659
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