Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Rosfariza Radzali"'
Autor:
Hock Jin Quah, Way Foong Lim, Zainuriah Hassan, Rosfariza Radzali, Norzaini Zainal, Fong Kwong Yam
Publikováno v:
Arabian Journal of Chemistry, Vol 12, Iss 8, Pp 3417-3430 (2019)
Effects of ultraviolet-assisted photo-electrochemical (PEC) etching current densities (J = 20, 40, 80, and 160 mA/cm2) towards structural, physical, and optical properties of aluminium indium gallium nitride (AlInGaN) semiconductors as well as corres
Externí odkaz:
https://doaj.org/article/baad4393f3a842989df92386dbb0fd0c
Autor:
Siti NorFarah Nadia Mohd Salleh, Alhan Farhanah Abd Rahim, Nurul Syuhadah Mohd Razali, Rosfariza Radzali, Ainorkhilah Mahmood, Irni Hamiza Hamzah
Publikováno v:
Key Engineering Materials. 947:39-45
Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with current Si manufacturing technologies. In this work, the impact of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54afb2228d7ad093068aee6bb7bef71
https://doi.org/10.4028/p-3a337l
https://doi.org/10.4028/p-3a337l
Autor:
Mohamad Rafiudin Ramle, Rosfariza Radzali, Alhan Farhanah Abd Rahim, Ainorkhilah Mahmood, Aslina Abu Bakar, Anis Nabilah Mohd Daud, Mohd Hanapiah Abdullah
Publikováno v:
Key Engineering Materials. 946:87-92
In this project, the surface structure of III-V semiconductor, GaAs, was altered to enhance the optical and electronic properties of the semiconductor. This project involved the designing and fabrication of non-porous and porous GaAs structures using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::181d5b8575278c0f27ca4b2fea44bdfb
https://doi.org/10.4028/p-v731ho
https://doi.org/10.4028/p-v731ho
Autor:
Alhan Farhanah Abd Rahim, Nurul Syuhadah Mohd Razali, Rosfariza Radzali, Ainokhilah Mahmood, Irni Hamiza Hamzah, Mohamed Fauzi Packeer Mohamed
Publikováno v:
Sains Malaysiana. 51:4087-4098
In this work, we reported on room temperature porous silicon (PS) and embedding PS using simple and economical techniques of electrochemical etching and thermal evaporation. The PS substrate was prepared using the technique of electrochemically etchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fffc5ec6064cc7252c8a97c7d0efcc7
https://doi.org/10.17576/jsm-2022-5112-17
https://doi.org/10.17576/jsm-2022-5112-17
Autor:
Fatimah Zulkifli, Rosfariza Radzali, Alhan Farhanah Abd Rahim, Ainorkhilah Mahmood, Nurul Syuhadah Mohd Razali, Aslina Abu Bakar
Publikováno v:
Microelectronics International. 39:101-109
Purpose Porous silicon (Si) was fabricated by using three different wet etching methods, namely, direct current photo-assisted electrochemical (DCPEC), alternating CPEC (ACPEC) and two-step ACPEC etching. This study aims to investigate the structural
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18595ffa3acb4263fa6b0a7163cb44e3
https://doi.org/10.1108/mi-01-2022-0009
https://doi.org/10.1108/mi-01-2022-0009
Autor:
Fatimah Zulkifli, Alhan Farhanah Abd Rahim, Aslina Abu Bakar, Rosfariza Radzali, Ainorkhilah Mahmood
Publikováno v:
Journal of Electrical & Electronic Systems Research. 19:173-177
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ff465c74f7eee6b34b0034d94091ade
https://doi.org/10.24191/jeesr.v19i1.023
https://doi.org/10.24191/jeesr.v19i1.023
Autor:
Alhan Farhanah Abd Rahim, Rosfariza Radzali, Nurul Hanida Abd Wahab, Noorezal Atfyinna Mohammed Napiah, Yushamdan Yusof, Ainorkhilah Mahmood
Publikováno v:
Solid State Phenomena. 301:12-17
A set of n-type porous silicon (PS) layers were fabricated by photoelectrochemical etching using direct current (DC) and pulse current (PC) techniques. The study aims to compare the effect of different resistivity (5 Ω and 10 Ω) on the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1ccc18ccdfc4c1c0f20ee422987b29b
https://doi.org/10.4028/www.scientific.net/ssp.301.12
https://doi.org/10.4028/www.scientific.net/ssp.301.12
Autor:
Ainorkhilah Mahmood, N. S. M. Razali, Alhan Farhanah Abd Rahim, Rosfariza Radzali, Muhammad Faiz Bahrol Anuar
Publikováno v:
Solid State Phenomena. 301:3-11
The fabrication of porous GaN (PGaN) by UV-assisted electrochemical etching with a variations of current densities (40, 60, and 80 mA/cm2) for 60 min in electrolytes consisting of 4% KOH are reported. Field Emission Scanning Electron Microscopy (FESE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::450db5a241c4a10e64e7da8dc3fba1ff
https://doi.org/10.4028/www.scientific.net/ssp.301.3
https://doi.org/10.4028/www.scientific.net/ssp.301.3
Autor:
Aslina Abu Bakar, Muhammad Aiman Najmi bin Rodzali, Rosfariza Radzali, Azlina Idris, Ahmad Rashidy Razali
In this research the dielectric constant of three types of Malaysian honey has been investigated using a non-destructive measurement technique. The objective of this research is to assess the dielectric constant of the three types of honey in Malaysi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::6b87416492726bccb3b68e5c9c77cfdd
https://zenodo.org/record/5765877
https://zenodo.org/record/5765877
Autor:
Rosfariza Radzali, N. S. M. Razali, Yusnita Mohd Ali, Alhan Farhanah Abd Rahim, Ainorkhilah Mahmood, Ahmad Sabirin Zoolfakar, Aida Azrenda Mustakim
Publikováno v:
Microelectronics International. 37:46-53
Purpose Porous silicon (PS) was successfully fabricated using an alternating current photo-assisted electrochemical etching (ACPEC) technique. This study aims to compare the effect of different crystal orientation of Si n(100) and n(111) on the struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::800255112b47c39b4c62d5e2321ad7a6
https://doi.org/10.1108/mi-08-2019-0052
https://doi.org/10.1108/mi-08-2019-0052