Zobrazeno 1 - 10
of 1 423
pro vyhledávání: '"Rosenwaks Y"'
Publikováno v:
In Applied Surface Science 1 February 2012 258(8):4069-4072
Autor:
Sadewasser, S., Abou-Ras, D., Azulay, D., Baier, R., Balberg, I., Cahen, D., Cohen, S., Gartsman, K., Ganesan, K., Kavalakkatt, J., Li, W., Millo, O., Rissom, Th., Rosenwaks, Y., Schock, H.-W., Schwarzman, A., Unold, T.
Publikováno v:
In Thin Solid Films 2011 519(21):7341-7346
Publikováno v:
In Organic Electronics 2010 11(11):1729-1735
Autor:
Shaya, O., Halpern, E., Khamaisi, B., Shaked, M., Usherenko, Y., Shalev, G., Doron, A., Levy, I., Rosenwaks, Y.
Publikováno v:
In Applied Surface Science 2010 256(19):5789-5795
Akademický článek
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Autor:
Yang X; State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China.; School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.; Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265503, China., Mukherjee A; Department of Physical Electronics, School of Electrical Engineering, Tel Aviv University, Ramat Aviv 69978, Israel., Li M; State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China.; School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.; Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265503, China., Wang J; State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China.; School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.; Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265503, China., Xia Y; State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China.; School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.; Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265503, China., Rosenwaks Y; Department of Physical Electronics, School of Electrical Engineering, Tel Aviv University, Ramat Aviv 69978, Israel., Zhao L; State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China.; School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.; Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265503, China., Dong L; Ministry of Education Engineering Research Center of Smart Microsensors and Microsystems, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China., Jiang Z; State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China.; School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.; Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265503, China.
Publikováno v:
ACS sensors [ACS Sens] 2023 Apr 28; Vol. 8 (4), pp. 1819-1826. Date of Electronic Publication: 2023 Apr 12.
Autor:
Walker, A., Shaked, A., Dagan, R., Kribus, A., Rosenwaks, Y., Ohlmann, J., Lackner, D., Dimroth, F.
The bulk minority carrier lifetime and interface recombination velocity in GaInP double-heterostructures (DHs) lattice matched to GaAs are extracted using time-resolved photoluminescence (PL) measured between 300 and 500K. Effective lifetimes show a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::7bbd0fec7b375d152a8380c7b041dcfd
https://publica.fraunhofer.de/handle/publica/261257
https://publica.fraunhofer.de/handle/publica/261257
Akademický článek
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Publikováno v:
In Journal of Crystal Growth 2006 291(2):363-369