Zobrazeno 1 - 10
of 18 313
pro vyhledávání: '"Rosenberger, A"'
Generalized Additive Models (GAMs) offer a balance between performance and interpretability in machine learning. The interpretability aspect of GAMs is expressed through shape plots, representing the model's decision-making process. However, the visu
Externí odkaz:
http://arxiv.org/abs/2409.16870
Autor:
Bonneau, Klara, Lederer, Jonas, Templeton, Clark, Rosenberger, David, Müller, Klaus-Robert, Clementi, Cecilia
Machine learned potentials are becoming a popular tool to define an effective energy model for complex systems, either incorporating electronic structure effects at the atomistic resolution, or effectively renormalizing part of the atomistic degrees
Externí odkaz:
http://arxiv.org/abs/2407.04526
The control of electron spins in materials that are simultaneously ferromagnetic and insulating opens up a wealth of quantum phenomena in spin-based electronics. Thin films of europium oxide (EuO) are ideal for the generation and manipulation of spin
Externí odkaz:
http://arxiv.org/abs/2404.17388
We develop the notion of a locally homomorphic channel and prove an approximate equivalence between those and codes for computing functions. Further, we derive decomposition properties of locally homomorphic channels which we use to analyze and const
Externí odkaz:
http://arxiv.org/abs/2404.14390
Autor:
Rosenberger, Paul, Kundu, Moumita, Gloskovskii, Andrei, Schlueter, Christoph, Nowak, Ulrich, Müller, Martina
Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface. For a low
Externí odkaz:
http://arxiv.org/abs/2404.12749
Publikováno v:
Engineering Fracture Mechanics, Volume 293, 1st December 2023, 109868
To this date the safety assessment of materials, used for example in the nuclear power sector, commonly relies on a fracture mechanical analysis utilizing macroscopic concepts, where a global load quantity K or J is compared to the materials fracture
Externí odkaz:
http://arxiv.org/abs/2403.18337
Autor:
Driver, Taran, Mountney, Miles, Wang, Jun, Ortmann, Lisa, Al-Haddad, Andre, Berrah, Nora, Bostedt, Christoph, Champenois, Elio G., DiMauro, Louis F., Duris, Joseph, Garratt, Douglas, Glownia, James M., Guo, Zhaoheng, Haxton, Daniel, Isele, Erik, Ivanov, Igor, Ji, Jiabao, Kamalov, Andrei, Li, Siqi, Lin, Ming-Fu, Marangos, Jon P., Obaid, Razib, O'Neal, Jordan T., Rosenberger, Philipp, Shivaram, Niranjan H., Wang, Anna L., Walter, Peter, Wolf, Thomas J. A., Wörner, Hans Jakob, Zhang, Zhen, Bucksbaum, Philip H., Kling, Matthias F., Landsman, Alexandra S., Lucchese, Robert R., Emmanouilidou, Agapi, Marinelli, Agostino, Cryan, James P.
The photoelectric effect is not truly instantaneous, but exhibits attosecond delays that can reveal complex molecular dynamics. Sub-femtosecond duration light pulses provide the requisite tools to resolve the dynamics of photoionization. Accordingly,
Externí odkaz:
http://arxiv.org/abs/2402.12764
Um den Anforderungen an eine inklusive Gesellschaft und der Etablierung eines inklusiven Bildungssystems in Sachsen gerecht werden zu können, unterstützen seit dem Schuljahr 2016/2017 Inklusionsassistenten bereits bestehende schulische Inklusionspr
Autor:
Dagar, Ritika, Zhang, Wenbin, Rosenberger, Philipp, Linker, Thomas M., Sousa-Castillo, Ana, Neuhaus, Marcel, Mitra, Sambit, Biswas, Shubhadeep, Feinberg, Alexandra, Summers, Adam M., Nakano, Aiichiro, Vashishta, Priya, Shimojo, Fuyuki, Wu, Jian, Vera, Cesar Costa, Maier, Stefan A., Cortés, Emiliano, Bergues, Boris, Kling, Matthias F.
Surface charges play a fundamental role in physics and chemistry, particularly in shaping the catalytic properties of nanomaterials. Tracking nanoscale surface charge dynamics remains challenging due to the involved length and time scales. Here, we d
Externí odkaz:
http://arxiv.org/abs/2401.02621
Autor:
Düring, Pia M., Rosenberger, Paul, Baumgarten, Lutz, Alarab, Fatima, Lechermann, Frank, Strocov, Vladimir N., Müller, Martina
Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic counterpar
Externí odkaz:
http://arxiv.org/abs/2312.09798