Frontiers of Comparative Plant Ecology I. H. Rorison J. P. Grime R. Hunt G. A. F. Hendry D. H. Lewis

Autor: Etherington, John R.

Publikováno v: Journal of Experimental Botany, 1989 Sep 01. 40(218), 1066-1067.

Externí odkaz: https://www.jstor.org/stable/23692463

A modelling study of hole transport in GaN/AlGaN superlattices.

Autor: Bai M; Department of Electrical and Electronic Engineering, University of Bristol, Bristol, BS8 1UB, UK. mb18200@bristol.ac.uk., Rorison J; Department of Electrical and Electronic Engineering, University of Bristol, Bristol, BS8 1UB, UK.

Publikováno v: Scientific reports [Sci Rep] 2023 Nov 16; Vol. 13 (1), pp. 20053. Date of Electronic Publication: 2023 Nov 16.

Theoretical investigation of static and dynamic characteristics of vertical-cavity surface-emitting lasers with incorporated two-dimensional photonic crystals.

Autor: Ivanov, P.¹ p.ivanov@bristol.ac.uk, Rorison, J.¹

Publikováno v: Optical & Quantum Electronics. Feb2010, Vol. 42 Issue 3, p193-213. 21p. 2 Diagrams, 3 Charts, 8 Graphs.

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Focused Ion Beam Etching of GaN

Autor: Flierl, C., White, I. H., Kuball, M., Heard, P. J., Allen, G. C., Marinelli, C., Rorison, J. M., Penty, R. V., Chen, Y., Shih-Yuan Wang

Publikováno v: Scopus-Elsevier

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct writ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7177a9a1e7e6a37683f92646eb03acda
https://doi.org/10.1557/s1092578300003392