Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Roozbeh Tabrizian"'
Publikováno v:
Micromachines, Vol 13, Iss 7, p 1003 (2022)
This paper presents the use of ferroelectric behavior in scandium–aluminum nitride (ScxAl1−xN) to create dual-mode Lamb-wave resonators for the realization of intrinsically configurable radio-frequency front-end systems. An integrated array of in
Externí odkaz:
https://doaj.org/article/6702b4a736ee4e709647ded578f68956
Publikováno v:
IEEE Transactions on Electron Devices. 69:4624-4631
This article presents a bulk acoustic wave (BAW) resonator with complementary switchable operation in the first and second thickness extensional modes (TE1 and TE2) at 7.04 and 13.4 GHz. Two ferroelectric scandium aluminum nitride (Sc0.28Al0.72N) lay
Wireless communication through dynamic spectrum allocation over microwave bands, essential to accommodate exponentially growing data traffic, requires massive array of radio-frequency (RF) filters for adaptive signal shaping at arbitrary frequencies.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae4b52689bed05748dc2db685925bf7b
https://doi.org/10.21203/rs.3.rs-2544285/v1
https://doi.org/10.21203/rs.3.rs-2544285/v1
Publikováno v:
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS).
Multifunctional electronic systems rely indispensably on high quality-factor (Q) micro- and nano-electro-mechanical systems (M/NEMS) resonators for frequency control applications such as precise clock generation, synchronization, and radio-frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8164f8f875878738d01e7e5570c9896
https://doi.org/10.21203/rs.3.rs-2110871/v1
https://doi.org/10.21203/rs.3.rs-2110871/v1
Publikováno v:
IEEE Electron Device Letters. 42:1065-1068
This letter reports intrinsically switchable ultra- and super-high-frequency Lamb-mode resonators based on the use of ferroelectricity in scandium aluminum nitride (ScxAl1−xN) films. Highly crystalline 200nm-thick Sc0.22Al0.78N film is sputtered us
Publikováno v:
IEEE Microwave and Wireless Components Letters. 31:701-704
This letter reports, for the first time, on the ferroelectric-on-semiconductor fin bulk acoustic resonators (FoS-FinBARs) with lithographically scaled frequencies up to 18 GHz and ${k} _{eff}^{2}$ . ${Q}$ as high as 17. The FoS-FinBARs benefit from t
Autor:
Xu-Qian, Zheng, Troy, Tharpe, S M, Enamul Hoque Yousuf, Nicholas G, Rudawski, Philip X-L, Feng, Roozbeh, Tabrizian
Publikováno v:
ACS applied materialsinterfaces. 14(32)
The discovery of ferroelectricity and advances in creating polar structures in atomic-layered hafnia-zirconia (Hf
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 68:753-759
A fabrication process is developed to grow ${c}$ -axis textured aluminum nitride (AlN) films on the sidewall of single-crystal silicon (Si) microfins to realize fin bulk acoustic wave resonators (FinBARs). FinBARs enable ultradense integration of hig
Publikováno v:
2022 IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS).