Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Roosevelt People"'
Autor:
K. Feder, Mark S. Hybertsen, J.M. Vandenberg, B.S. Falk, K. Evans-Lutterodt, Roosevelt People, John Michael Geary, Muhammad A. Alam, M.W. Focht, R.E. Leibenguth, Theo Siegrist, S.K. Sputz, J. Sheridan-Eng, G.J. Przybyiek, F.S. Walters, J.A. Grenko, L. E. Smith, J. Levkoff, K.G. Glogovsky, L.C. Luther, Michael Geva, D.M. Tennant, D. V. Stampone, S. Shunk, N.N. Tzafaras, L.J. Peticolas, L.J.P. Ketelsen, D.M. Romero, S. N. G. Chu, J.E. Johnson, J.L. Zilko, J.L. Lentz, T.L. Pernell, Joseph Michael Freund, E. D. Isaacs, Liming Zhang, W.A. Gault, C.L. Reynolds
Publikováno v:
IEEE Journal of Quantum Electronics. 36:641-648
We describe the design, fabrication, and performance of a five-element quarterwave-shifted distributed feedback laser array with monolithically integrated spot size converters intended for use as a multiple-wavelength source in dense wavelength-divis
Autor:
T.L. Pernell, Joseph Michael Freund, J.L. Lentz, J.E. Johnson, Roosevelt People, S.K. Sputz, F.S. Walters, S.N.G. Chu, M.W. Focht, L. A. Gruezke, L.J.P. Ketelsen, D. V. Stampone, D.M. Romero, L.J. Peticolas, L. E. Smith, G.J. Przybylek, J.A. Grenko, N.N. Tzafaras, C.L. Reynolds, Muhammad A. Alam, K.G. Glogovsky, J.M. Vandenberg, L.C. Luther
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 6:19-25
We have demonstrated a semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter at the input for low-loss coupling to planar lightguide circuit silica waveguides or clea
Publikováno v:
Thin Solid Films. 222:120-125
The physics underlying normal incidence hole intersubband absorption in p-type semiconductor quantum wells is briefly reviewed. The fabrication and performance characteristics of a pseudomorphic Ge0.25Si0.75/Si p-type quantum well infrared photodetec
Autor:
Clyde G. Bethea, W. Fang, P. Wisk, Roosevelt People, Arthur Mike Sergent, Sung-Nee George Chu, G. Nykolak, R. Pawelek, T. Tanbun-Ek, Young-Kai Chen, P.J. Sciortino, W.T. Tsang
Publikováno v:
CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics.
Publikováno v:
Physics and Simulation of Optoelectronic Devices VII.
MOCVD selective area growth is a simple and versatile process technique widely used in the fabrication of optical integrated circuits. A computational model for selective area growth is verified using a comprehensive suite of experimental measurement
Autor:
L.S. Cheng, P. Parayanthal, Roosevelt People, L.J.P. Ketelsen, S.K. Sputz, J.E. Johnson, J.A. Grenko, R.W. Glew, D.C. Sutryn, C. J. Pinzone, K. Evans-Lutterodt, Mark S. Hybertsen, W.A. Asous, R.L. Hartman, Muhammad A. Alam, M. Geva, E. D. Isaacs, J.M. Vandenberg, Sung Nee G. Chu
Publikováno v:
Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178).
The guiding principles used in the design and fabrication of the Lucent Technologies electroabsorption (EA)-modulated device are discussed. They were designed to generate detailed understanding of modulator and laser quantum well design as they are l
Autor:
Roosevelt People, Thomas R. Fullowan, Tawee Tanbun-Ek, Paul F. Sciortino, Gerald Nykolak, Clyde G. Bethea, Laura Ellen Adams, Arthur Mike Sergent
Publikováno v:
SPIE Proceedings.
New enabling technologies are needed for optical communication systems to accommodate rapidly growing traffic demands. Wavelength conversion and high-speed optical packet switching/routing will be key technology components for realizing more flexible
Publikováno v:
SPIE Proceedings.
We theoretically and experimentally investigate a recently proposed integrated tunable laser which consists of a curved waveguide distributed-feedback (DFB) laser and a passive electroabsorption (EA) modulator-separated by an isolation section. The m
Autor:
R. Pawelek, Ken S. Feder, Tawee Tanbun-Ek, Won-Tien Tsang, W. Fang, Roosevelt People, Donald M. Tennant, Patrick William Wisk, Paul F. Sciortino, Sung-Nee G. Chu, Uziel Koren, Arthur Mike Sergent, Clyde G. Bethea
Publikováno v:
SPIE Proceedings.
This paper describes the fabrication techniques pertaining to the on-wafer lasing wavelength control of an electroabsorption modulated laser (EML) using both a direct approach and a tunable wavelength source. The direct approach utilizes multiple gra
Publikováno v:
Infrared Detectors: State of the Art.
Normal incidence spectral response and bias dependent responsivity measurements on p-type GexSi1-x/Si quantum well infrared photodetectors reveal anomalous long wavelength photoresponse, extending out to 18 micrometers depending on quantum well param