Výsledky vyhledávání - "Ronny Kirste"

Akademický článek

HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

Autor: Nathaniel Rohrbaugh, Luis Hernandez-Balderrama, Felix Kaess, Ronny Kirste, Ramon Collazo, Albena Ivanisevic

Publikováno v: AIP Advances, Vol 6, Iss 6, Pp 065105-065105-6 (2016)

This study examined the conductance sensitivity of AlGaN/GaN field effect transistors in response to varying Hg/HNO3 solutions. FET surfaces were covalently functionalized with phytochelatin-5 peptides in order to detect Hg in solution. Results showe

Externí odkaz: https://doaj.org/article/3e5f2d72f15945fbab9fbf1b9b8be1a4

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Akademický článek

Second-Harmonic Generation of Blue Light in GaN Waveguides

Autor: Martin Rigler, Tinkara Troha, Wei Guo, Ronny Kirste, Isaac Bryan, Ramon Collazo, Zlatko Sitar, Marko Zgonik

Publikováno v: Applied Sciences, Vol 8, Iss 8, p 1218 (2018)

Second-harmonic generation was studied in III-metal-polar GaN films grown on sapphire substrates by metalorganic chemical vapor deposition and formed into ridge waveguides. Broadband near-IR femtosecond pulses of an optical parametric amplifier syste

Externí odkaz: https://doaj.org/article/485d3e78385c4780b6b41e4cce74aef7

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High p-conductivity in AlGaN enabled by polarization field engineering

Autor: Shashwat Rathkanthiwar, Pramod Reddy, Baxter Moody, Cristyan Quiñones-García, Pegah Bagheri, Dolar Khachariya, Rafael Dalmau, Seiji Mita, Ronny Kirste, Ramón Collazo, Zlatko Sitar

Publikováno v: Applied Physics Letters. 122:152105

High p-conductivity (0.7 Ω−1 cm−1) was achieved in high-Al content AlGaN via Mg doping and compositional grading. A clear transition between the valence band and impurity band conduction mechanisms was observed. The transition temperature depend

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::52d49b474f621d4f199f5942d2086bcc
https://doi.org/10.1063/5.0143427

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High conductivity in Ge-doped AlN achieved by a non-equilibrium process

Autor: Pegah Bagheri, Cristyan Quiñones-Garcia, Dolar Khachariya, James Loveless, Yan Guan, Shashwat Rathkanthiwar, Pramod Reddy, Ronny Kirste, Seiji Mita, James Tweedie, Ramón Collazo, Zlatko Sitar

Publikováno v: Applied Physics Letters. 122:142108

Highly conductive Ge-doped AlN with conductivity of 0.3 (Ω cm)−1 and electron concentration of 2 × 1018 cm−3 was realized via a non-equilibrium process comprising ion implantation and annealing at a moderate thermal budget. Similar to a previou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bbddbc7c46a821984a0d50643cc8465f
https://doi.org/10.1063/5.0146439

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