Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Ronny Haupt"'
Autor:
Sasmita Srichandan, Franz Heider, Yulia Polak, Georg Ehrentraut, Laszlo Juhasz, Martin Haberjahn, Egidijus Sakalauskas, Ronny Haupt
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d4c616ed6cfc4d2eeb3b50817e7bd1
https://doi.org/10.1109/asmc57536.2023.10121130
https://doi.org/10.1109/asmc57536.2023.10121130
Autor:
Nivea Figueiro, Matthew Sendelbach, Thibault Labbaye, Stephane Rey, Yoann Blancquaert, Barak Bringoltz, Shay Wolfling, Guido Rademaker, Lucie Mourier, Ronny Haupt, Daniel Kandel, Francisco Sanchez, Stefan Landis, Michael Shifrin, Jonathan Pradelles, Laurent Pain, Avron Ger, Roy Koret
Publikováno v:
34th European Mask and Lithography Conference.
Multiple electron beam direct write lithography is an emerging technology promising to address new markets, such as truly unique chips for security applications. The tool under consideration, the Mapper FLX-1200, exposes long 2.2 μm-wide zones calle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d80a3ea14d78d256f76f1def66de6055
https://doi.org/10.1117/12.2326595
https://doi.org/10.1117/12.2326595
Autor:
Dhara Dave, Guido Rademaker, Anna Golotsvan, Erwin Slot, Ronny Haupt, T. Shapoval, Stefan Landis, Anat Marchelli, Stephane Rey, Tal Itzkovich, Laurent Pain, Guido De Boer, Jonathan Pradelles, Marco Jan-Jaco Wieland
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
One of the metrology challenges for massively parallel electron beams is to verify that all the beams that are used perform within specification. The Mapper FLX-1200 platform exposes fields horizontally segmented in 2.2 μm-wide stripes. This yields
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a008dc644c92908ce8182754eadae8f9
https://doi.org/10.1117/12.2297535
https://doi.org/10.1117/12.2297535
Autor:
G. Ben-Dov, T. Shapoval, Bernd Schulz, L. Fuerst, R. Wang, Ronny Haupt, S. Lozenko, Carsten Hartig, Z. Lindenfeld, Matthias Ruhm
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
Numerical simulation of overlay metrology targets has become a de-facto standard in advanced technology nodes. While appropriate simulation software is widely available in the industry alongside with metrics that allow selection of the best performin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8358762b55825e7f089d9997f189bef5
https://doi.org/10.1117/12.2297011
https://doi.org/10.1117/12.2297011
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
As technology nodes become smaller it is getting more important to control all aspects of influencing parameters on the deposition of thin films using a CVD process. It is well known that physical parameters like gas flow or temperature heavily influ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a6fa4b34c7773a776faffaef672cb7
https://doi.org/10.1109/asmc.2017.7969219
https://doi.org/10.1109/asmc.2017.7969219
Autor:
L. Debarge, Bernd Schulz, T. Shapoval, Rolf Seltmann, Shivam Agarwal, A. Cangiano, Carsten Hartig, Ronny Haupt, Roshita Ramkhalawon, Robert Melzer, J. Engelmann, N. Schmidt, Matthias Ruhm, A. Reichel, C. Kroh
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Tilt of the shallow trench isolation on the wafer edge with the radial signature is a known issue for all technology nodes. Presence of this tilt was proven by cross-sectional TEM measurements. For advanced nodes, starting from 28 nm, this tilt becom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::915235cfad09b5083aeb8d378afcb80d
https://doi.org/10.1109/asmc.2016.7491088
https://doi.org/10.1109/asmc.2016.7491088
Autor:
Vidya Ramanathan, Kartik Venkataraman, Fang Fang, Dimitry Sanko, Alok Vaid, Xiaoxiao Zhang, Stilian Ivanov Pandev, Ronny Haupt
Publikováno v:
SPIE Proceedings.
In recent technology nodes, advanced process and novel integration scheme have challenged the precision limits of conventional metrology; with critical dimensions (CD) of device reduce to sub-nanometer region. Optical metrology has proved its capabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3294d7624079ab523791103e5d6df6b5
https://doi.org/10.1117/12.2219775
https://doi.org/10.1117/12.2219775
Autor:
Sean Durran, Matthias Ruhm, Eric Cotte, Rolf Seltmann, Agostino Cangiano, Tino Hertzsch, Eitan Hajaj, Daniel Fischer, Ronny Haupt, Tal Itzkovich, Carsten Hartig, Barak Bringoltz, Bernd Schulz, Boris Efraty, T. Shapoval
Publikováno v:
SPIE Proceedings.
In the current paper we are addressing three questions relevant for accuracy: 1. Which target design has the best performance and depicts the behavior of the actual device? 2. Which metrology signal characteristics could help to distinguish between t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::375c145b108a8434d6b039d9adb35708
https://doi.org/10.1117/12.2085788
https://doi.org/10.1117/12.2085788
Autor:
Kartik Venkataraman, Ronny Haupt, Alok Vaid, Young Ki Kim, Stilian Ivanov Pandev, Jamie Tsai, Ren Zhou, Vidya Ramanathan, Lokesh Subramany, Fang Fang, Dimitry Sanko
Publikováno v:
SPIE Proceedings.
CD uniformity requirements at 20nm and more advanced nodes have challenged the precision limits of CD-SEM metrology, conventionally used for scanner qualification and in-line focus/dose monitoring on product wafers. Optical CD metrology has consequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17b26f2a27222bfb82c702ea0b45ff03
https://doi.org/10.1117/12.2086056
https://doi.org/10.1117/12.2086056
Autor:
Carlos L. Ygartua, Vijayalakshmi Seshachalam, Ronny Haupt, Alok Vaid, Zhiming Jiang, Michael Lenahan
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
In this paper we discuss the impact of these two effects on the film thickness measurement and describe our approach to develop a film stack model and recipe which accounts for the underlying stack as well as Chemical Mechanical Planarization (CMP) v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d9966999fd34ee3ad1a66418e9480f9
https://doi.org/10.1109/asmc.2014.6847016
https://doi.org/10.1109/asmc.2014.6847016