Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ronnie Porat"'
Autor:
Roy Mizrahi, Hong Kia Ang, Khor Wui Cheng, Ronnie Porat, Seng Kee Wee, Wi Hoong Lim, Kian Boon Tan, Kok Hui Lim, Jessica Zhang, Qin Deng, Guy Gichon, Kia Kearn Chng
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Bitline contact misalignment has a negative impact on yield in 20nm and sub-20nm NAND technology, which is typically worse at a wafer's edge than at its center. We hypothesized that photo critical dimensions (CD) and/or registration issues were contr
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
This paper describes a methodology for defect review and process monitoring on wafer's upper bevel and apex. A case study gives an example of successful application.
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Over the last decade, integrated EDX (Energy Dispersive X-ray) systems on in-line SEM review tools have become the main method of providing the fab with a fast and efficient way to identify and reduce defects and yield limiting sources. As device siz
Autor:
Ronnie Porat, Kfir Dotan, Shirley Hemar, Lior Levin, Ken Li, George Sung, Chen-Ting Lin, Sheng-Kuo Lin, Hsin-I Wang
Publikováno v:
2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and