Monolithically integrated square-extensional 13.6 MHz MEMS resonator

Autor: Pekko, Panu, Kaajakari, Ville, Koort, Marko, Ronkainen, Hannu, Oja, Aarne

Publikováno v: Pekko, P, Kaajakari, V, Koort, M, Ronkainen, H & Oja, A 2006, Monolithically integrated square-extensional 13.6 MHz MEMS resonator . in MEMSWAVE 2006: Proceedings of the 7th International Conference on RF MEMS and RF Microsystems . 7th International Conference on RF MEMS and RF Microsystems, MEMSWAVE 2006, Orvieto, Italy, 27/06/06 .

A square-extensional 13.6 MHz MEMS-resonator was monolithically integrated with buffer amplifier circuitry fabricated with CMOS process. Integration was performed by utilizing the novel Plug-up method.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=355e65625b88::ba9a6d8de5e178284dcc1b7812d443c4
https://cris.vtt.fi/en/publications/80f2f786-4871-4e10-8a2d-c927be1f6de9

Polysilicon diode for electrostatic discharge protection of RF integrated passive devices

Autor: Ronkainen, Hannu, Tuovinen, Reijo, Siren, Esko

Publikováno v: Ronkainen, H, Tuovinen, R & Siren, E 2001, Polysilicon diode for electrostatic discharge protection of RF integrated passive devices . in 19th Nordic Semiconductor Meeting: Abstracts ., 42, 19th Nordic Semiconductor Meeting, NSM19, Copenhagen, Denmark, 20/05/01 .

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=355e65625b88::84ae6f68e9682c4a10fe456aaa0b32e6
https://cris.vtt.fi/en/publications/4c185287-1788-4074-abd6-5dc82eeef52d

MCM-D RF circuit block design

Autor: Ronkainen, Hannu, Riihisaari, Tarja, Kattelus, Hannu, Kujala, Arni, Kaitila, Jyrki

Publikováno v: Ronkainen, H, Riihisaari, T, Kattelus, H, Kujala, A & Kaitila, J 1999, MCM-D RF circuit block design . in 36th IMAPS Nordic Annual Conference . IMAPS Nordic, pp. 69-77, 36th IMAPS Nordic Annual Conference, Helsinki, Finland, 19/09/99 .

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=355e65625b88::7c4bdc4abbb4be6a1921980763dc57f2
https://cris.vtt.fi/en/publications/6eceac29-03db-4552-b7a9-130d1e04ab92

Modelling of temperature dependence of a floating pad structure's RF properties

Autor: Riihisaari, Tarja, Ronkainen, Hannu, Kattelus, Hannu, Hakojärvi, Hannu

Publikováno v: Riihisaari, T, Ronkainen, H, Kattelus, H & Hakojärvi, H 1998, Modelling of temperature dependence of a floating pad structure's RF properties . in Simulation of Semiconductor Processes and Devices 1998 . Springer, pp. 30-33, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD '98, Leuven, Belgium, 2/09/98 . https://doi.org/10.1007/978-3-7091-6827-1_9

Temperature dependence of silicon MCM substrate RF properties is studied by modeling simple I/O structures. Both normal RF IC and high resistivity silicon substrates were processed. Lumped element equivalent circuit parameters were extracted for temp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=355e65625b88::beb3842b37d76d04925dbc576a882e07
https://cris.vtt.fi/en/publications/d5e96fdd-02f1-4aad-bb04-42aa457d8ea0

A 1.6 GHz current-controlled oscillator with integrated inductor

Autor: Tarvainen, Esa, Ronkainen, Hannu, Kuivalainen, Pekka

Publikováno v: Tarvainen, E, Ronkainen, H & Kuivalainen, P 1998, ' A 1.6 GHz current-controlled oscillator with integrated inductor ', Analog Integrated Circuits and Signal Processing, vol. 15, no. 1, pp. 85-95 . https://doi.org/10.1023/A:1008240815438

A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented. The integrated resonator circuit uses high speed(18 GHz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=355e65625b88::b2679a97203757a1ad6ef9130b7e4a2c
https://cris.vtt.fi/en/publications/03ac07c2-6750-494d-a9b1-cb82806d85a8