Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Rongyu Lin"'
Autor:
Yinchang Ma, Yuan Yan, Linqu Luo, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Jefferson Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue, Xixiang Zhang
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
Abstract Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor th
Externí odkaz:
https://doaj.org/article/b13f4d1bcf104a229532b64af0f695b4
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 1, Pp 1-8 (2022)
The performance of AlGaN-based light-emitting diodes (LEDs) emitting at UVA–UVC regions can be severely compromised due to the polarization difference (ΔP) between the last quantum barrier (LQB) and the electron blocking layer (EBL). In this work,
Externí odkaz:
https://doaj.org/article/e8a05f05d34c46bf935d790e6bca1f88
Autor:
Rongyu Lin, Peng Han, Yue Wang, Ronghui Lin, Yi Lu, Zhiyuan Liu, Xiangliang Zhang, Xiaohang Li
Publikováno v:
Nanomaterials, Vol 11, Iss 10, p 2466 (2021)
The tunnel junction (TJ) is a crucial structure for numerous III-nitride devices. A fundamental challenge for TJ design is to minimize the TJ resistance at high current densities. In this work, we propose the asymmetric p-AlGaN/i-InGaN/n-AlGaN TJ str
Externí odkaz:
https://doaj.org/article/a27c7b7e2ce249b281b6764ec21bc696
Publikováno v:
Journal of Materials Engineering and Performance. 31:9596-9605
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc11e5063331558004366c3767952b68
https://doi.org/10.1007/s11665-022-07001-1
https://doi.org/10.1007/s11665-022-07001-1
Autor:
Cathy Qin, Sanjana Murali, Elsa Lee, Vaishnavi Supramaniam, Derek J Hausenloy, Johnes Obungoloch, Joanna Brecher, Rongyu Lin, Hao Ding, Theophilus N Akudjedu, Udunna C Anazodo, Naranamangalam R Jagannathan, Ntobeko A B Ntusi, Orlando P Simonetti, Adrienne E Campbell-Washburn, Thoralf Niendorf, Regina Mammen, Sola Adeleke
Publikováno v:
European Heart Journal - Cardiovascular Imaging. 23:e246-e260
Cardiovascular disease continues to be a major burden facing healthcare systems worldwide. In the developed world, cardiovascular magnetic resonance (CMR) is a well-established non-invasive imaging modality in the diagnosis of cardiovascular disease.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e14e6ed9c0201a0932c39966fc6fd6c1
https://doi.org/10.1093/ehjci/jeab286
https://doi.org/10.1093/ehjci/jeab286
Autor:
Rongyu Lin, Zhiyuan Liu, Peng Han, Ronghui Lin, Yi Lu, Haicheng Cao, Xiao Tang, Chuanju Wang, Vishal Khandelwal, Xiangliang Zhang, Xiaohang Li
Publikováno v:
Journal of Materials Chemistry C. 10:17602-17610
A stacked XGBoost/LightGBM model was developed to predict and systematically investigate various high-performance SL-EBLs and to suggest a simpler and experimentally realizable low Al-content SL-EBL design.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75a35a6595ffa7c2b4c8319deef1ece2
https://doi.org/10.1039/d2tc02335k
https://doi.org/10.1039/d2tc02335k
Autor:
Rongyu Lin, Wei Guo, Zhihua Zheng, Feng Wu, Changqing Chen, Jiangnan Dai, Yi Zhang, Zhe Chuan Feng, Maocheng Shan, Jie’an Jiang, Xiaohang Li, Yi Lu, Yongming Zhao, Ming Tian
Publikováno v:
ACS Photonics. 8:1264-1270
We have demonstrated a record short wavelength lasing at 244.63 nm with TE dominant polarization from GaN quantum wells (QWs) at room temperature (RT). The optical threshold of 310 kW/cm2 is compar...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c37022928721de9f02cde9af4464050
https://doi.org/10.1021/acsphotonics.1c00090
https://doi.org/10.1021/acsphotonics.1c00090
Autor:
Xiao Tang, Yi Lu, Rongyu Lin, Che-Hao Liao, Yue Zhao, Kuang-Hui Li, Na Xiao, Haicheng Cao, Wedyan Babatain, Xiaohang Li
Publikováno v:
Applied Physics Letters. 122:121101
In this research, β-Ga2O3/NiO heterostructures were grown directly on CeO2 buffered Hastelloy flexible substrates. With pulsed laser deposition under high temperatures, as-grown β-Ga2O3 and NiO thin films have a preferred out-of-plane orientation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f9fa14fafd916251c7a3566a139337d
https://doi.org/10.1063/5.0146030
https://doi.org/10.1063/5.0146030
Autor:
Xiao Tang, Shibin Krishna, Jose Tauboada, Che-Hao Liao, Na Xiao, Rongyu Lin, Chen Liu, Xiaohang Li, Kuang-Hui Li, Dongxing Zheng
Publikováno v:
Journal of Materials Chemistry C. 9:15868-15876
β-Ga2O3 is a wide bandgap semiconductor material that is promising for many fields such as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β-Ga2O3 thin films could only be realized on six-fold symmetric single cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca8e45e69fb1d8dca466f73aff5380f
https://doi.org/10.1039/d1tc02852a
https://doi.org/10.1039/d1tc02852a
Publikováno v:
Applied Surface Science. 608:155099
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ed2e9c3aedf1d330a4a6aa6013b03f2
https://doi.org/10.1016/j.apsusc.2022.155099
https://doi.org/10.1016/j.apsusc.2022.155099