Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Rongyan Sun"'
Autor:
Alasdair Mitchell, Xinyang Wei, Rongyan Sun, Kazuya Yamamura, Long Ye, Jonathan Corney, Nan Yu
Publikováno v:
Results in Engineering, Vol 24, Iss , Pp 103462- (2024)
Plasma processing presents complex behavioural characteristics that are created by different generation and processing methods. In this context, the digital twin (DT) method offers a visualisation and simulation techniques that enable better understa
Externí odkaz:
https://doaj.org/article/bcb2f75af218458392756ce2f5cdd193
Publikováno v:
Precision Engineering. 72:224-236
Slurry is widely used in polishing difficult-to-machine materials. However, it is accompanied with some issues, such as the agglomeration of abrasives and high disposal cost. Although using fixed abrasive grains instead of slurry can solve these issu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f81a9686633df46d86ddf977c53a707
https://doi.org/10.1016/j.precisioneng.2021.05.003
https://doi.org/10.1016/j.precisioneng.2021.05.003
Publikováno v:
CIRP Annals. 69:301-304
Aluminum nitride (AlN) easily reacts with water when polished using an aqueous slurry. Moreover, grains tend to easily shed off of the AlN surface since it is a sintered material. Thus, obtaining a smooth AlN surface by traditional mechanical polishi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab5810259e023f08fb8ce773d6181f5d
https://doi.org/10.1016/j.cirp.2020.04.096
https://doi.org/10.1016/j.cirp.2020.04.096
Autor:
Toru Fukano, Kentaro Kawai, Masanobu Kitada, Kazuya Yamamura, Xu Yang, Kenta Arima, Keiichiro Watanabe, Shiro Miyazaki, Rongyan Sun
Publikováno v:
Nanomanufacturing and Metrology. 2:168-176
Atmospheric-pressure plasma chemical vaporization machining (AP-PCVM) using helium as a carrier gas to achieve uniform thickness of quartz crystal wafers has been practically applied to the mass production of high-performance crystal units. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9424e1af0ac5d79f481eda2bc77e4dc3
https://doi.org/10.1007/s41871-019-00044-4
https://doi.org/10.1007/s41871-019-00044-4
Publikováno v:
Nanomanufacturing and Metrology. 2:140-147
Single-crystal 4H–SiC is a promising next-generation semiconductor material for high-power and low-loss power devices. Electrochemical mechanical polishing (ECMP) is a very promising polishing technique for the manufacture of SiC wafers owing to it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::798950686a2f4583ff62083351caaee5
https://doi.org/10.1007/s41871-019-00043-5
https://doi.org/10.1007/s41871-019-00043-5
Autor:
Nian Liu, Kentaro Sugimoto, Naoya Yoshitaka, Hideaki Yamada, Rongyan Sun, Kentaro Kawai, Kenta Arima, Kazuya Yamamura
Publikováno v:
Diamond and Related Materials. 124:108899
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21f9b0e144d465eb1d941790dd16ec45
https://doi.org/10.1016/j.diamond.2022.108899
https://doi.org/10.1016/j.diamond.2022.108899
Publikováno v:
ACS Applied Materials & Interfaces. 11:2535-2542
Anodic oxidation is a promising surface modification technique for the manufacture of SiC wafers owing to its high oxidation rate. It is also possible to fabricate porous SiC by anodic oxidation and etching owing to the material properties of SiC. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34d1b46d74ac2ba4a360c7d1983f56a6
https://doi.org/10.1021/acsami.8b19557
https://doi.org/10.1021/acsami.8b19557
Autor:
Xu Yang, Kazuya Yamamura, Yuji Ohkubo, Kenta Arima, Kentaro Kawai, Rongyan Sun, Katsuyoshi Endo
Publikováno v:
Electrochimica Acta. 271:666-676
In an attempt to realize the high-quality and highly efficient polishing of SiC, the anodic oxidation mechanism of SiC was studied to enable the application of electrochemical mechanical polishing (ECMP). Through linear scanning voltammetry (LSV) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de021e2eb48b4a558bfefe0c13f348db
https://doi.org/10.1016/j.electacta.2018.03.184
https://doi.org/10.1016/j.electacta.2018.03.184
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Scientific Reports
Scientific Reports
In recent years, reaction-sintered silicon carbide (RS-SiC) has been of interest in many engineering fields because of its excellent properties, such as its light weight, high rigidity, high heat conductance and low coefficient of thermal expansion.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed26644a9c109e357b1754a2838fd42e
http://link.springer.com/article/10.1038/s41598-018-20849-5
http://link.springer.com/article/10.1038/s41598-018-20849-5
Autor:
Rongyan Sun, Katsuyoshi Endo, Hideaki Yamada, K. Emori, Kazuya Yamamura, Y. Mokuno, Yuji Ohkubo, A. Chayahara
Publikováno v:
CIRP Annals. 67:353-356
Single-crystal diamond (SCD) is considered to be an ideal material for next-generation power devices. Plasma-assisted polishing (PAP) without using an abrasive was applied to polish SCD fabricated by chemical vapor deposition. Argon-based plasma cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c71cd5653cd6a994ee6d5c0b70c1a73
https://doi.org/10.1016/j.cirp.2018.04.074
https://doi.org/10.1016/j.cirp.2018.04.074