Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Rongrui He"'
Autor:
Sparks, Justin, Aro, Stephen, Rongrui He, Goetz, Melanie, Krug, James, McDaniel, Sean, Berry, Patrick, Cook, Gary, Schepler, Kenneth, Sazio, Pier
Supplementary Material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f9f9eb5077eda2cdc62f1c01b61f375
Autor:
Todd D. Day, Parivash Moradifar, Rongrui He, Yunzhi Liu, John V. Badding, Jennifer L. Russell, Nitin Samarth, Thomas E. Mallouk, Pengtao Xu, Shih Ying Yu, Vincent M. Torres, Nasim Alem, Suzanne E. Mohney, Susan Kempinger
Publikováno v:
Nano Letters. 18:546-552
A magnetic, metallic inverse opal fabricated by infiltration into a silica nanosphere template assembled from spheres with diameters less than 100 nm is an archetypal example of a "metalattice". In traditional quantum confined structures such as dots
Autor:
Patrick A. Berry, Pier J. A. Sazio, Stephen C. Aro, Melanie L. Goetz, Venkatraman Gopalan, John V. Badding, Rongrui He, Kenneth L. Schepler, Justin R. Sparks, James P. Krug, Sean A. McDaniel, Gary Cook
Publikováno v:
Optical Materials Express. 10:1843
The optical fiber geometry is known for rugged, high power laser sources that are preferred for many applications, but is typically limited to the visible and near-infrared regions of the electromagnetic spectrum due to the transmission limits of sil
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 28(28)
Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous sili
Autor:
John V. Badding, Noel Healy, Rongrui He, Anna C. Peacock, Pier J. A. Sazio, Justin R. Sparks, Subhasis Chaudhuri, Thomas C. Fitzgibbons
Publikováno v:
Advanced Functional Materials. 23:1647-1654
Deposition techniques that can uniformly and conformally coat deep trenches and very high aspect ratio pores with uniform thickness fi lms are valuable in the synthesis of complex three-dimensionally structured materials. Here it is shown that high p
Autor:
Venkatraman Gopalan, Mahesh Krishnamurthi, Noel Healy, John V. Badding, Pier J. A. Sazio, Rongrui He, Justin R. Sparks, Anna C. Peacock
Publikováno v:
Nature Photonics. 6:174-179
The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this a
Autor:
Todd D. Day, Banafsheh Keshavarzi, Noel Healy, Mahesh Krishnamurthi, Rongrui He, Ali Borhan, Pier J. A. Sazio, Anna C. Peacock, Neil F. Baril, Venkatraman Gopalan, Justin R. Sparks, John V. Badding
Publikováno v:
Journal of the American Chemical Society. 134:19-22
Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semi-conductors. The challenge in producing it from SiH4 precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow
Autor:
John V. Badding, Derek W. Keefer, Noel Healy, Todd D. Day, Pier J. A. Sazio, Jennifer Esbenshade, Rongrui He, Anna C. Peacock, Justin R. Sparks
Publikováno v:
Journal of Lightwave Technology. 29:2005-2008
A novel selective filling technique has been developed for the patterning of semiconductor materials in microstructured optical fibers (MOFs) based on waveguide curing of epoxy filled capillary holes. The technique is compatible with the high pressur
Publikováno v:
Nano Letters. 7:1953-1959
We demonstrate very high frequency (VHF) nanomechanical resonators based upon single-crystal silicon nanowires (SiNWs), which are prepared by the bottom-up chemical synthesis. Metallized SiNW resonators operating near 200 MHz are realized with qualit
Autor:
Subhasis Chaudhuri, Noel Healy, Mahesh Krishnamurthi, John V. Badding, Pier J. A. Sazio, Justin R. Sparks, Neil F. Baril, Rongrui He, Venkatraman Gopalan, Anna C. Peacock, Thomas C. Fitzgibbons
Publikováno v:
SPIE Proceedings.
ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2-5 microns and potentially beyond using frequency conversion.