Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Rongkang Niu"'
Publikováno v:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
This work reports on the mechanism of abnormal dynamic on-resistance (dynamic Ron) in AlGaN/GaN high electron mobility transistors (HEMT) under drain stress (V DS , stress). Based on the capacitance change, it is proposed that the defects in GaN/SiN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11751f48436b9521622483d832ccb317
https://doi.org/10.1109/icsict49897.2020.9278362
https://doi.org/10.1109/icsict49897.2020.9278362
Publikováno v:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
This work investigates the mechanism of threshold voltage V th shift of D-Mode GaN-on-Si high electron mobility transistors (HEMTs) based on double pulse I DS -V GS measurements. The influence of applied drain voltage V DS on shift of V th is also st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c00b29ecf820075b26d6a0c6f8332975
https://doi.org/10.1109/icsict49897.2020.9278171
https://doi.org/10.1109/icsict49897.2020.9278171