Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Rongchi Zhang"'
Autor:
Feng Jiang, Junling Yu, Guo Feng, Tao Wang, Xiaojun Zhang, Quan Zhang, Rongchi Zhang, Qian Wu, Qing Hu, Yun Yu, Jianmin Liu
Publikováno v:
Boletín de la Sociedad Española de Cerámica y Vidrio, Vol 63, Iss 2, Pp 98-103 (2024)
Novel (Cr,V)-ZrSiO4 jewel green pigments with near-infrared reflection performance were prepared at a low temperature of 900 °C. Effects of Cr/Si mole ratio on phase composition, microstructure, Vis–NIR reflection performance, optical properties a
Externí odkaz:
https://doaj.org/article/e2f2dcac350a4efcbf6a83fd887bdc90
Autor:
Feng Jiang, Junling Yu, Guo Feng, Junhua Chen, Tao Wang, Xiaojun Zhang, Quan Zhang, Rongchi Zhang, Qian Wu, Qing Hu, Yun Yu, Jianmin Liu
Publikováno v:
Journal of the European Ceramic Society. 43:4179-4188
Publikováno v:
Ceramics International. 48:28274-28281
Beat Phenomenon Suppression for Reduced DC-Link Capacitance IPMSM Drives With Fluctuated Load Torque
Publikováno v:
IEEE Transactions on Industrial Electronics. 66:8334-8344
Beat phenomenon is an important concern in the reduced dc-link capacitance motor drive system. In previous research works, the topic is mainly concentrated on the beat phenomenon caused by the interaction of the fluctuated dc-link voltage and the mot
Publikováno v:
IEEE Transactions on Power Electronics. 34:4558-4568
The LC resonance between the line inductor and the dc-link film capacitor is an important concern in the reduced dc-link capacitance interior permanent magnet synchronous motor drive system. In this paper, an active damping method based on the virtua
Autor:
Lianghong Zhu, Dianguo Xu, Junya Huo, Binxing Li, Rongchi Zhang, Gaolin Wang, Shaobo Liu, Frede Blaabjerg, Nannan Zhao
Publikováno v:
Liu, S, Li, B, Zhang, R, Zhao, N, Wang, G, Huo, J, Zhu, L, Xu, D & Blaabjerg, F 2019, Impact of Parasitic Parameters on GaN HEMT Driving Module for Totem-pole Bridgeless PFC Converter . in Proceedings of 2019 22nd International Conference on Electrical Machines and Systems (ICEMS) ., 8922463, IEEE Press, China, International Conference on Electrical Machines and Systems (ICEMS), 22nd International Conference on Electrical Machines and Systems (ICEMS 2019), Harbin, China, 11/08/2019 . https://doi.org/10.1109/ICEMS.2019.8922463
Gallium nitride high electron mobility transistor (GaN HEMT) has striking effect in many fields due to the absence of parasitic diodes, ultra-high switching speed and small on-state resistance. However, it also makes GaN HEMT sensitive to parasitic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c3c578cb11a23747f877f8d8bdafa74
https://vbn.aau.dk/da/publications/63c50785-44d9-4a0c-a72b-8a44c73b177b
https://vbn.aau.dk/da/publications/63c50785-44d9-4a0c-a72b-8a44c73b177b
Publikováno v:
2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC).
Due to the excellent reverse recovery characteristics, gallium nitride high electron mobility transistor (GaN HEMT) is the ideal device for totem-pole bridgeless PFC circuits. However, the driving technology of GaN HEMT deserves to be concerned when
Publikováno v:
2018 2nd IEEE Conference on Energy Internet and Energy System Integration (EI2).
This paper presents a GaN-based totem-pole bridgeless boost Power-Factor-Correction (PFC) converter for air conditioning applications. Based on the small signal modeling, the power level transfer function of totem-pole bridgeless boost PFC converter