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pro vyhledávání: '"Rong-Wei Gong"'
Autor:
Tse-Jen Wang, Lian-Feng Lee, Chih-Ching Shih, Rong-Wei Gong, Ting-Chang Lin, Hui-Wen Chan, Albert Kuo, Hsiao-Tien Chang
Publikováno v:
International Symposium for Testing and Failure Analysis.
The single-bit charge loss of flash memory after stress has been investigated using TEM with selective chemical etching and TCAD simulation for the effect of silicon dopant profile and electrical failure analysis technique. However, the abnormal dopa
Publikováno v:
2013 18th OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching.
M-section-cascaded p-phase-shifted long-period grating (LPG) on LiNbO3 is fabricated using a two-step proton exchange. The result shows (M - 2) sidelobes are situated between the two dominant rejection bands which are increasingly separated with resp