Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Rong-Kun Chang"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:1764-1771
The silicon-controlled rectifier (SCR) has been reported to protect CMOS integrated circuits (ICs), due to high ESD robustness within a small silicon area. However, the holding voltage ( ${V}_{h}{)}$ of the SCR device was too low to suffer the latch-
Publikováno v:
IEEE Transactions on Electron Devices. 67:2725-2731
The FinFET architecture has widely been used in the digital circuit application, due to the good short channel effect control and driving current boost. However, the worse thermal dispassion and smaller effective silicon volume would cause the signif
Autor:
Ming-Dou Ker, Rong-Kun Chang
Publikováno v:
IEEE Transactions on Electron Devices. 67:40-46
In the implanted biomedical devices, the silicon chips with monopolar stimulation design have been widely applied. To protect the negative-voltage pins of the implanted silicon chip from the electrostatic discharge (ESD) damage, the ESD protection ci
Autor:
Rong-Kun Chang, Ming-Dou Ker
Publikováno v:
IEEE Electron Device Letters. 42:395-397
For some applications, the CMOS ICs need to be supplied with positive and negative voltage sources for the desired circuit operations. To supply the negative voltage source for circuit operations in the silicon chip with the common p-type substrate g
Publikováno v:
IEEE Transactions on Electron Devices. 65:5267-5274
On-chip electrostatic discharge (ESD) protection device with large dimension can sustain high-ESD current, but the parasitic capacitance of the ESD protection device will increase the difficulty of impedance matching and degrade the bandwidth for bro
Publikováno v:
The Road from Nanomedicine to Precision Medicine ISBN: 9781003027010
The Road from Nanomedicine to Precision Medicine ISBN: 9780429295010
The Road from Nanomedicine to Precision Medicine
The Road from Nanomedicine to Precision Medicine ISBN: 9780429295010
The Road from Nanomedicine to Precision Medicine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c07c167717c10fe3ff113c2bb0856e5
https://doi.org/10.1201/9781003027010-5
https://doi.org/10.1201/9781003027010-5
Publikováno v:
The AAPS Journal. 19:1348-1358
This article discusses the range of outcomes from biopharmaceutical studies of specific modified release (MR) product examples in preclinical models and humans. It touches upon five major biopharmaceutical areas for MR drug products: (1) evidence for
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 15:633-636
The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high- $k$ /metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inse
Autor:
Chun-Yu Lin, Rong-Kun Chang
Publikováno v:
IEEE Transactions on Electron Devices. 62:2824-2829
An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirection
Publikováno v:
IEEE Transactions on Electron Devices. 62:1349-1352
A pMOS device with an embedded silicon-controlled rectifier to improve its electrostatic discharge (ESD) robustness has been proposed and implemented in a 28-nm high- $k$ /metal gate CMOS process. An additional p-type ESD implantation layer was added