Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Rong-Jhe Lyu"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 260-266 (2015)
By virtue of the film-profile engineering scheme and properly designed device structure, ZnO TFTs with discrete bottom gates and sub-micron channels were fabricated and characterized. In the fabrication, a suspended bridge constructed over the bottom
Externí odkaz:
https://doaj.org/article/e6f9d5ac31d64ce7b57fde1719f2eeb8
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:2177-2189
Molybdenum–silver orthophosphate (Mo–Ag3PO4) composites were synthesized through a simple co-precipitation method. Structure and optical characterization by X-ray diffraction, scanning electronic microscopy, transmission electronic microscopy, an
Publikováno v:
IEEE Transactions on Electron Devices. 64:1069-1075
We report an exquisite, film-profile-engineering approach for producing nanometer-scale channel-length (L) ZnO thin-film transistors (TFTs). The scheme is based on a unique laminated structure in conjunction with a well-designed etching process for b
Publikováno v:
IEEE Transactions on Electron Devices. 63:3533-3539
In this paper, a new depletion-load metal oxide-based inverter with 3-D structure is realized with film-profile-engineered InGaZnO (IGZO) thin-film transistors (TFTs). The proposed inverter possesses vertically stacked load and drive TFTs whose thres
Publikováno v:
Journal of Photochemistry and Photobiology A: Chemistry. 397:112585
AgX/MgBi2O6 composites (X = Cl, Br, and I), prepared from the hydrothermal procedure combined with a co-precipitation method, display unique visible light responsive photocatalytic activity. The catalytic performance of the AgX/MgBi2O6 composites wer
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 260-266 (2015)
By virtue of the film-profile engineering scheme and properly designed device structure, ZnO TFTs with discrete bottom gates and sub-micron channels were fabricated and characterized. In the fabrication, a suspended bridge constructed over the bottom
Publikováno v:
IEEE Transactions on Electron Devices. 61:1417-1422
A novel approach, which can delicately form a desirable film profile for deposited gate oxide, channel, and source/drain contacts of oxide-based thin-film transistors (TFTs) is proposed. To demonstrate the film-profile engineering concept used in thi
Publikováno v:
IEEE Electron Device Letters. 36:796-798
Root cause for the anomalous degradation in the ON-current of film-profile-engineered ZnO thin-film transistors with discrete bottom gates, a new scheme proposed in our previous work, is investigated. Our findings indicate that the deposited source/d
Autor:
Chao-Yi Wu, Chia-Chun Lin, Rong-Jhe Lyu, Min-Lin Wu, Lun-Lun Chen, Chun-Yen Chao, Yung-Hsien Wu
Publikováno v:
Microelectronic Engineering. 109:216-219
The YGeOx enjoys a low interface trap density of 2.1i?1011cm-2eV-1.Low leakage current of 3.1i?10-10A/cm2 at the effective electric field of 1MV/cm.13mV flatband voltage shift for BTI test under 10MV/cm for 8000s at 85?C. YGeOx formed by thermal oxid
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
We demonstrate InGaZnO (IGZO) TFTs with channel-length (L) tunable Vth for high-gain BEOL logic gate inverters in a unique film-profile engineering (FPE) approach. In this FPE scheme the thickness and film profile of gate oxide and IGZO active layer