Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Rong-Chau Liu"'
Publikováno v:
IEEE Transactions on Electron Devices. 66:505-511
The characteristics of GaN-based light-emitting diodes (LEDs) with a hybrid structure incorporating a microhole array, 45 sidewalls, and an appropriate SiO2 nanoparticle (NP)/microsphere (MSs) passivation layer are studied and reported. The use of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::641881cdee7a27393853def2064d3af4
https://doi.org/10.1109/ted.2018.2882802
https://doi.org/10.1109/ted.2018.2882802
Publikováno v:
International Journal of Hydrogen Energy. 43:19816-19824
An interesting hydrogen sensor based on a Pd/HfO2/GaOx/GaN metal-oxide-semiconductor (MOS) structure is fabricated and demonstrated. The HfO2 and GaOx layers are prepared using a sputtering approach and hydrogen peroxide (H2O2) treatment. The hydroge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a84629dc21fd608be6205f82eacd5a39
https://doi.org/10.1016/j.ijhydene.2018.08.213
https://doi.org/10.1016/j.ijhydene.2018.08.213
Autor:
Wen-Chau Liu, Shiou-Ying Cheng, Rong-Chau Liu, Po-Cheng Chou, Jung-Hui Tsai, Jian-Kai Liou, Chun-Chia Chen
Publikováno v:
IEEE Transactions on Electron Devices. 60:2282-2289
A GaN-based light-emitting diode (LED) with an aluminum (Al) reflecting and an SiO2 insulating layers (RILs) deposited on the naturally textured p-GaN surface is fabricated and studied. The use of RIL could enhance the current spreading performance a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1224ba5b8ef3af121b45548341f810dd
https://doi.org/10.1109/ted.2013.2260163
https://doi.org/10.1109/ted.2013.2260163
Autor:
Huey-Ing Chen, Chi Shiang Hsu, Wen-Chau Liu, Po Cheng Chou, Rong Chau Liu, Chien Chang Huang, Tai You Chen, Po Shun Chiu
Publikováno v:
Materials Chemistry and Physics. 135:150-157
Temperature-dependent hydrogen sensing properties of Pd/GaN Schottky type sensors with different Cl 2 plasma surface treated times are studied and demonstrated. The sensing behaviors are studied in terms of Schottky barrier height variation Δ φ B ,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d838429a9c6cab4fe15779cdd8f79936
https://doi.org/10.1016/j.matchemphys.2012.04.038
https://doi.org/10.1016/j.matchemphys.2012.04.038
Autor:
Chi Shiang Hsu, Cheng-Wei Lin, Rong Chau Liu, Tai You Chen, Chien Chang Huang, Huey-Ing Chen, Wen-Chau Liu
Publikováno v:
Sensors and Actuators B: Chemical. 160:1481-1484
An ammonia sensor basing on the indium tin oxide (ITO) thin film on a quartz substrate which was fabricated by RF sputtering with substrate thermal treatment, is studied and demonstrated. From the experimental results, the good NH 3 sensing performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a9dce58d48ed4c1cbcb3b09efaa3f01
https://doi.org/10.1016/j.snb.2011.07.041
https://doi.org/10.1016/j.snb.2011.07.041
Autor:
Kun-Wei Lin, Chien Cheng Huang, Rong Chau Liu, Tai You Chen, Wen-Chau Liu, Chi Shiang Hsu, Huey-Ing Chen, Po Cheng Chou
Publikováno v:
International Journal of Hydrogen Energy. 36:15906-15912
An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H 2 /air, the studied sensor still exhibits high sensitivity at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::925fd60165c0496ce1b2525d2b1e9b23
https://doi.org/10.1016/j.ijhydene.2011.09.031
https://doi.org/10.1016/j.ijhydene.2011.09.031
Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness Approach
Autor:
Po-Shun Chiu, Po-Cheng Chou, Rong-Chau Liu, Huey-Ing Chen, Chien-Chang Huang, Tai-You Chen, Wen-Chau Liu, Chi-Shiang Hsu
Publikováno v:
IEEE Transactions on Electron Devices. 58:4079-4086
Hydrogen-sensing characteristics of a Pd/GaN Schottky diode with a simple surface roughness approach are studied and demonstrated. A high sensing response Sr of 2.05 × 105 and a large Schottky barrier height variation ratio (ΔφB/φair) of 36.3% up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::605a9eae274b3169ee262728334e2364
https://doi.org/10.1109/ted.2011.2166269
https://doi.org/10.1109/ted.2011.2166269
Autor:
Ching-Wen Hung, Rong-Chau Liu, Kun-Wei Lin, Wen-Chau Liu, Po-Hsien Lai, Huey-Ing Chen, Ssu-I Fu, Yan-Ying Tsai, Tzu-Pin Chen
Publikováno v:
Sensors and Actuators B: Chemical. 125:22-29
A hydrogen sensor based on the Pd/GaAs pseudomorphic high electron mobility transistor (PHEMT) is fabricated and investigated under various hydrogen concentrations in air and N2 environments. Experimentally, in nitrogen (air) ambiances, the studied s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0df6da018c920648bcd0c83e9a03e0e
https://doi.org/10.1016/j.snb.2007.01.027
https://doi.org/10.1016/j.snb.2007.01.027
Autor:
Po-Hsien Lai, Tzu-Pin Chen, Rong-Chau Liu, Kuei-Yi Chu, Wen-Chau Liu, Ssu-I Fu, Shiou-Ying Cheng, Li-Yang Chen
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 6:500-508
Temperature-dependent dc characteristics and RF performances of InGaP/GaAs heterojunction bipolar transistors with sulfur treatment are systematically studied. The base-surface-recombination current, specific contact resistance, and sheet resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::741f347c8419f16aaca58012ac72292e
https://doi.org/10.1109/tdmr.2006.883154
https://doi.org/10.1109/tdmr.2006.883154
Autor:
Kun-Wei Lin, Huey-Ing Chen, Yan-Ying Tsai, Ching-Wen Hung, Rong-Chau Liu, Chin-Chuan Cheng, Wen-Chau Liu, Wei-Hsi Hsu
Publikováno v:
IEEE Sensors Journal. 6:287-292
An interesting hydrogen sensor based on an Al/sub 0.24/Ga/sub 0.76/As Schottky barrier high-electron mobility transistor with a catalytic Pd metal/oxide/semiconductor is fabricated and demonstrated. In comparison with traditional Schottky diodes or c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03bb23d9d1a15fddb02adccd1ff1a960
https://doi.org/10.1109/jsen.2006.870157
https://doi.org/10.1109/jsen.2006.870157