Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Rong Fu Lin"'
Autor:
Kung-Ching Chu, Rong-Fu Lin, Cheng-Hsun Tsai, Sung-Yu Su, Ching-Wen Huang, Wen-Ching Tsai, Jin-Nan Yeh, Cheng-Jeng Ou, Shih-Chyuan Fan Jiang
Publikováno v:
SID Symposium Digest of Technical Papers. 45:308-311
We have presented the brightness changes in positive and negative dielectric anisotropy liquid crystal (P-LC and N-LC) with different alignment materials for no eye-strain at low frequencies. We propose a method for analyzing the brightness changes a
Autor:
Rong Fu Lin, Yong Chang
Publikováno v:
Advanced Materials Research. 711:506-512
By employing the concepts of support line and support function of the integral geometry, this paper presents an method for analyzing cam mechanisms with a flat-faced follower, including a translating follower, oscillating follower and planar motion f
Autor:
Yong Chang, Rong Fu Lin
Publikováno v:
Applied Mechanics and Materials. :301-306
This paper proposes the conditions of no-undercutting and contact-retaining of the disc cam mechanism with negative radius roller follower. Then, it presents the contact stress expression based on the mechanical analysis. In addition, the effects of
Autor:
Rong Fu Lin, Yong Chang
Publikováno v:
Applied Mechanics and Materials. :774-779
The offset optimization is one of the key elements of designing cam mechanisms. This paper presents the mechanical model of a disc cam mechanism with an offset translating negative radius roller follower and deduces the efficiency expression. Then it
Publikováno v:
Physical Review B. 36:7712-7714
The $c(4\ifmmode\times\else\texttimes\fi{}4)$ reconstruction of Si(100) clean surface has been obtained by suitable thermal annealing within the temperature range of 580-630\ifmmode^\circ\else\textdegree\fi{}C. The structure transition between $c(4\i
Studies of the High Temperature Nitridation Structures of the Si(111) Surface by LEED, AES and EELFS
Publikováno v:
Springer Series in Surface Sciences ISBN: 9783642733451
It is well known that the silicon nitride film can be used as a passive film in IC technology. Since 1980 the structure of silicon nitride layers has been studied by several groups [1,2,3]. In this paper, the nitridation structure of the Si(111) surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d537cd156907e6719b5b7b09f7f27de
https://doi.org/10.1007/978-3-642-73343-7_62
https://doi.org/10.1007/978-3-642-73343-7_62
Publikováno v:
Surface Science Letters. 188:A357
The initial nitridation structures of the Si(111) surface have been studied by electron energy loss fine structure (EELFS). From the values of the bond lengths between the nitrogen atoms and their nearest silicon atoms obtained by the experimental me