Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe

Autor: Wostyn, Kurt, Arimura, Hiroaki, Kimura, Yosuke, Hikavyy, Andriy, Rondas, Dirk, Conard, Thierry, Ragnarsson, Lars Åke, Horiguchi, Naoto

Publikováno v: Diffusion and Defect Data Part B: Solid State Phenomena; February 2021, Vol. 314 Issue: 1 p49-53, 5p

HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth

Autor: Wostyn, Kurt, Dhayalan, Sathish K., Hikavyy, Andriy, Loo, Roger, Douhard, Bastien, Moussa, Alain, Rondas, Dirk, Kenis, Karine, Mertens, Paul W., Holsteyns, Frank, De Gendt, Stefan, Profijt, Harald B.

Publikováno v: Diffusion and Defect Data Part B: Solid State Phenomena; September 2014, Vol. 219 Issue: 1 p20-23, 4p

Use of a Purged FOUP to Improve H-Terminated Silicon Surface Stability Prior to Epitaxial Growth

Autor: Wostyn, Kurt, Rondas, Dirk, Kenis, Karine, Loo, Roger, Yakovitch, Andriy, Douhard, Bastien, Mertens, Paul W., Holsteyns, Frank, Gendt, Stefan De, D, Lucia, and, Urzo, Van, Luc

Publikováno v: ECS Transactions; August 2014, Vol. 64 Issue: 6 p669-673, 5p

Impact of Ge-Oxide-Scavenging on Low-T Steam Oxidation and Passivation of Bi-Axially Strained Si0.75Ge0.25

Autor: Wostyn, Kurt, Ragnarsson, Lars-Åke, Arimura, Hiroaki, Chasin, Adrian, Conard, Thierry, Rondas, Dirk, Loo, Roger, Holsteyns, Frank, Horiguchi, Naoto

Publikováno v: ECS Transactions; October 2019, Vol. 93 Issue: 1

Evaluation of the Si0.8Ge0.2-on-Si Epitaxial Quality by Inline Surface Light Scattering: A Case Study on the Impact of Interfacial Oxygen

Autor: Wostyn, Kurt, Kenis, Karine, Rondas, Dirk, Loo, Roger, Hikavyy, Andriy Yakovitch, Dhayalan, Sathish, Douhard, Bastien, Mertens, Paul W., Holsteyns, Frank, De Gendt, Stefan, Simpson, Gavin, Bast, Gerhard, Swaminathan, Karthik

Publikováno v: ECS Transactions; August 2014, Vol. 64 Issue: 6