Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ronan Tremblay"'
Autor:
A. Le Corre, Samy Almosni, Ronan Tremblay, J.-P. Burin, Tony Rohel, Nicolas Bertru, Olivier Durand, Yoan Léger, Antoine Létoublon, Charles Cornet, T. Quinci, J.-P. Gauthier
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, 2017, 466, pp.6-15. ⟨10.1016/j.jcrysgro.2017.02.011⟩
Journal of Crystal Growth, Elsevier, 2017, 466, pp.6-15. ⟨10.1016/j.jcrysgro.2017.02.011⟩
Journal of Crystal Growth, 2017, 466, pp.6-15. ⟨10.1016/j.jcrysgro.2017.02.011⟩
Journal of Crystal Growth, Elsevier, 2017, 466, pp.6-15. ⟨10.1016/j.jcrysgro.2017.02.011⟩
International audience; In this work, we investigate the impact of growth parameters on surface morphology, doping levels and dopant activation in AlGaP epilayers grown on GaP substrate by solid source molecular beam epitaxy. Atomic Force Microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25c8909033ad14589aa793d7bb248049
https://hal.science/hal-01529569
https://hal.science/hal-01529569
Autor:
Charles Cornet, Antoine Létoublon, Mounib Bahri, Karine Tavernier, M.F. da Silva, T. Nguyen Thanh, Anne Ponchet, Rozenn Bernard, Ronan Tremblay, Y. Ping Wang, A. Le Corre, Samy Almosni, Olivier Durand, T. Rohel, Gilles Patriarche, Jithesh Kuyyalil, Julien Stodolna, Ludovic Largeau, César Magén
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩
Applied Physics Letters, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩
Zaguán. Repositorio Digital de la Universidad de Zaragoza
instname
Applied Physics Letters, American Institute of Physics, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩
Applied Physics Letters, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩
Zaguán. Repositorio Digital de la Universidad de Zaragoza
instname
International audience; We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c827752c0c70e0281f9cd84afca06236
https://hal.archives-ouvertes.fr/hal-01228809/file/1.4935494.pdf
https://hal.archives-ouvertes.fr/hal-01228809/file/1.4935494.pdf