Maskless and contactless patterned silicon deposition using a localized PECVD process

Autor: Ronan Leal, Tatiana Novikova, Bastien Bruneau, Erik Johnson, François Silva, Nada Habka, Pavel Bulkin

Publikováno v: Plasma Sources Science and Technology
Plasma Sources Science and Technology, IOP Publishing, 2020, 29 (2), pp.025023. ⟨10.1088/1361-6595/ab5e2c⟩

We present a novel technique to perform contactless and mask-free patterned plasma enhanced chemical vapour deposition and etching. When a powered electrode with narrow slits is placed very close to the substrate, plasma is selectively ignited within

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31befc06c8005806039069733a2a815b
https://hal.archives-ouvertes.fr/hal-02545248/document

In situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth

Autor: P. Roca i Cabarrocas, Martin Foldyna, Ronan Leal, Lukáš Halagačka

Publikováno v: Photonics and Nanostructures-Fundamentals and Applications
Photonics and Nanostructures-Fundamentals and Applications, Elsevier, 2018, 30, pp.73-77. ⟨10.1016/j.photonics.2018.04.011⟩

Low-temperature growth of doped epitaxial silicon layers is a promising way to reduce the cost of p-n junction formation in c-Si solar cells. In this work, we study process of highly doped epitaxial silicon layer growth using in situ spectroscopic el

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57dd14f4ae5113f033c4aa70724c6c2c
https://hal.archives-ouvertes.fr/hal-01908701

Silicon epitaxy by low-temperature RF-PECVD using SiF4/H2/Ar gas mixtures for emitter formation in crystalline solar cells

Autor: Pere Roca i Cabarrocas, Jean-Christophe Dornstetter, G. Poulain, Jean-Luc Maurice, Ronan Leal, Farah Haddad

Publikováno v: Publons

This paper describes ongoing studies on the emitter formation by PECVD (Plasma Enhanced Chemical Vapor Deposition) using SiF4/H2/Ar chemistry in crystalline silicon solar cells. H2 depletion and ion bombardment have been highlighted to be crucial fac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::073f5229b20c6fc5d8f47e15683a0d7e
https://doi.org/10.1109/pvsc.2015.7356052

High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

Autor: Ronan Léal, Farah Haddad, Gilles Poulain, Jean-Luc Maurice, Pere Roca i Cabarrocas

Publikováno v: AIP Advances, Vol 7, Iss 2, Pp 025006-025006-8 (2017)

Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential tem

Externí odkaz: https://doaj.org/article/66dd8cc072254392ab128ab928ff530c