Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Ronald S. Nowicki"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:1073-1082
As process complexities increase, the need has also increased for control of the cleanliness of film/film interfaces by the use of cluster processing tools which are capable of in vacuo wafer transport and predeposition removal of the thin (10–30 A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::511648ddc5fc159653ddc3c3da35b35b
https://doi.org/10.1116/1.577579
https://doi.org/10.1116/1.577579
Publikováno v:
MRS Proceedings. 303
A new technique for improving the diffusion barrier properties of thin, thermallyevaporated nickel, chromium and nichrome films on silicon is described. In this technique, known as “Rapid Thermal Annealing” (RTA), profound differences in the diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::542a94d9a9acb81aa6b36e24d1d5a343
https://doi.org/10.1557/proc-303-375
https://doi.org/10.1557/proc-303-375
Publikováno v:
MRS Proceedings. 182
The presence of a thin (10-30Å) oxide (“native oxide”) layer on a silicon surface prior to the deposition of another film on that surface can contribute to difficulties with subsequent device processing steps, e.g. contact metallization and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61bba5722fdb7d7cbcc1013ed728630b
https://doi.org/10.1557/proc-182-89
https://doi.org/10.1557/proc-182-89
Autor:
Ronald S. Nowicki, Arthur J. Learn
Publikováno v:
Thin Solid Films. 67:385-393
The rate of silicon regrowth via transport of silicon through an overlying aluminum or aluminum alloy metallization at 500°C was studied as a function of doping level and grain size of the silicon and metal alloy composition, It is shown that the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6922e90c0071210e67737e8aea2a9149
https://doi.org/10.1016/0040-6090(80)90473-3
https://doi.org/10.1016/0040-6090(80)90473-3
Autor:
Ronald S. Nowicki
Publikováno v:
Gold Bulletin. 15:21-24
The effectiveness of a number of semiconductor devices depends on the efficiency with which interdiffusion between the semiconductor and metals, which must be applied to it either as contacts or conductive metallizations, can be blocked. Comparisons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58aa2a7bb5ce3b30d98e4d4ba066f977
https://doi.org/10.1007/bf03216567
https://doi.org/10.1007/bf03216567
Autor:
Ronald S. Nowicki, John F. Moulder
Publikováno v:
Journal of The Electrochemical Society. 128:562-567
We report a preliminary study in which the physical and electrical properties of d‐c magnetron and co‐deposited rf diode molybdenum silicide films of varying stoichiometry are compared. It is shown that the d‐c magnetron films deposited from a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::091ce8baff33e3d2ccf10780a314a3ad
https://doi.org/10.1149/1.2127458
https://doi.org/10.1149/1.2127458
Publikováno v:
Applied Physics Letters. 41:1127-1129
Thermal oxidation of TaSi2 in dry oxygen and steam has been investigated. 0.3‐μm‐thick films of tantalum silicide were deposited by cosputtering on high resistivity 〈111〉 silicon and oxidized silicon wafers. After a crystallization anneal in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::391cbf60560ddd2f3f9e470b83339cdb
https://doi.org/10.1063/1.93424
https://doi.org/10.1063/1.93424
Autor:
Ronald S. Nowicki
Publisher Summary This chapter discusses sputtering for very-large-scale-integration (VLSI). With the onset of VLSI device technology, the requirements for thin films employed in the devices created unique processing problems that have resulted in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aeb04086c9301a92afd457b5958970b
https://doi.org/10.1016/b978-0-12-234108-3.50007-8
https://doi.org/10.1016/b978-0-12-234108-3.50007-8
Autor:
JohnF Moulder, Ronald S. Nowicki
Publikováno v:
Microelectronics Reliability. 26:399
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3efdc3e9c52b32a4fc50a304353c8211
https://doi.org/10.1016/0026-2714(86)90747-x
https://doi.org/10.1016/0026-2714(86)90747-x
Autor:
Ronald S. Nowicki
Publikováno v:
Journal of The Electrochemical Society. 130:1446-1446
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a03e221e70e4bbd8a024fbb297916ad
https://doi.org/10.1149/1.2119993
https://doi.org/10.1149/1.2119993