Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ronald L. DiCarlo"'
Publikováno v:
Journal of Crystal Growth. 310:2395-2398
From the vapor pressure equation of a metalorganic precursor, its partial pressure is calculated. The accuracy of that vapor pressure equation is therefore important when calculating the deposition efficiency of a precursor. Knowing the exact value o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c46abd170aeca78a8fbdb564dd0854
https://doi.org/10.1016/j.jcrysgro.2007.11.196
https://doi.org/10.1016/j.jcrysgro.2007.11.196
Autor:
Artashes Amamchyan, Randall J. Goyette, Egbert Woelk, Ronald L. DiCarlo, Michael Brendan Power, Deo Shenai
Publikováno v:
Journal of Crystal Growth. 298:172-175
Commercial strategy to graded SiGe buffer layers and “strained silicon” involves passing germane (GeH 4 ) gas or germanium tetrachloride (GeCl 4 ) vapors as the preferred germanium sources, along with a silicon source over a heated substrate. Tod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::792260715139d6d3bd9a7676f5d264b0
https://doi.org/10.1016/j.jcrysgro.2006.10.194
https://doi.org/10.1016/j.jcrysgro.2006.10.194
Autor:
Robert A. Ware, Ronald L. DiCarlo, Egbert Woelk, Alan G. Keiter, Deodatta Vinayak Shenai-Khatkhate, Charles J. Marsman, Robert F. Polcari
Publikováno v:
Journal of Crystal Growth. 287:679-683
Trimethylindium (TMI) is the preferred precursor for the deposition of indium containing layers by organo-metallic vapor phase epitaxy (OMVPE) because of its higher vapor pressure and its ability to transport readily into vapor phase. However, mainta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba733dcafac28f6a7a1dc8cadf21c0e
https://doi.org/10.1016/j.jcrysgro.2005.10.095
https://doi.org/10.1016/j.jcrysgro.2005.10.095
Autor:
Michael Brendan Power, Bruno Lamare, Deodatta Vinayak Shenai-Khatkhate, Grégoire Beaudoin, Artashes Amamchyan, Ronald L. DiCarlo, Egbert Woelk, Isabelle Sagnes
Publikováno v:
Journal of Crystal Growth. 287:684-687
Germanium and gallium arsenide have long been used in semiconductor structures and electronic devices. While organometallic vapor phase epitaxy (OMVPE) of gallium arsenide on germanium substrate is quite common in the solar cell industry for satellit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::790dae0429658781ece2228087868bb5
https://doi.org/10.1016/j.jcrysgro.2005.10.094
https://doi.org/10.1016/j.jcrysgro.2005.10.094
Publikováno v:
Journal of Crystal Growth. 272:816-821
As metalorganic vapor-phase epitaxy (MOVPE) is becoming well-established production technology, there are equally growing concerns associated with its bearing on personnel and community safety, environmental impact and maximum quantities of hazardous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd227637f496d64e48579dca59db4ea3
https://doi.org/10.1016/j.jcrysgro.2004.09.007
https://doi.org/10.1016/j.jcrysgro.2004.09.007
Publikováno v:
Journal of Crystal Growth. 272:603-608
Trimethylindium (TMI) and tertiarybutylphosphine (TBP) are an attractive combination of sources for Metalorganic vapor phase epitaxy (MOVPE) of InP-based compounds. TBP is used to deposit high-quality layers at significantly lower V/III ratios, and i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f830536ee76b1908c65230c2bcf20d
https://doi.org/10.1016/j.jcrysgro.2004.09.006
https://doi.org/10.1016/j.jcrysgro.2004.09.006
Publikováno v:
Journal of Crystal Growth. 248:91-98
The purity of trimethylindium (TMI) has improved significantly during the past few years, as a result of improvements in its synthesis and purification. However, consistent high purity and batch-to-batch variation remain as primary concerns. In the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e960bd850b30ae27c5537e86d5d23cf7
https://doi.org/10.1016/s0022-0248(02)01854-7
https://doi.org/10.1016/s0022-0248(02)01854-7