Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Ronald Goossens"'
Autor:
Linmiao Zhang, Zakir Ullah, Joel Thomas, Wim Tjibbo Tel, Ravin Somasundaram, Klaus Thul, Kaustuve Bhattacharyya, Cees Lambregts, Ronald Goossens, Emil Schmitt-Weaver, Venky Subramony, Chris de Ruiter, Masazumi Matsunobu
Publikováno v:
SPIE Proceedings.
With photolithography as the fundamental patterning step in the modern nanofabrication process, every wafer within a semiconductor fab will pass through a lithographic apparatus multiple times. With more than 20,000 sensors producing more than 700GB
Autor:
Machi Ryu, Chung-Yong Kim, Austin Peng, Jeong Heung Kong, Yun-A Sung, Se Yeon Jang, Ju Hee Shin, Khalid Elbattay, Noh-Kyoung Park, Zhao-Ze Li, Jin Phil Choi, Young Seog Kang, Tony Park, Peter Nikolsky, Chris Strolenberg, Jangho Shin, Andrew Moe, Anand Guntuka, Vito Tomasello, Ronald Goossens, Du Hyun Beak, Dong Kyeng Han
Publikováno v:
SPIE Proceedings.
Shrinking pattern sizes dictate that scanner-to-scanner variations for HVM products shrink proportionally. This paper shows the ability to identify (a subset of) root causes for mismatch between ArF immersion scanners using scanner metrology. The roo
Autor:
Fan Yongfa, Maggie Ma, Yen-Wen Lu, Zhang Qiang, Gary Zhang, Xin Guo, Mu Feng, Ronald Goossens, Peng Liu, Zheng Leiwu, Wallow Thomas I, Qian Zhao, Keith Gronlund
Publikováno v:
SPIE Proceedings.
Strong resist shrinkage effects have been widely observed in resist profiles after negative tone development (NTD) and therefore must be taken into account in computational lithography applications. However, existing lithography simulation tools, esp
Autor:
Craig Hickman, Alexander Serebryakov, Vivek Kumar Jain, Hoyoung Kang, Yuan He, Scott L. Light, Bernd Geh, Ronald Goossens, Scott Larson, Zhi-Yuan Niu, Peter Engblom, Erik Byers
Publikováno v:
SPIE Proceedings.
Scanner matching based on CD or patterning contours has been demonstrated in past works. All of these published works require extensive wafer metrology. In contrast, this work extends a previously proposed optical pattern matching method that require
Autor:
Junwei Lu, Seung-Hoon Park, Kyung Kang, Stefan Hunsche, Yu Cao, Fei Du, John Barbuto, Zongchang Yu, Zhengfan Zhang, Chris Park, Jong-Ho Lim, Wenjin Shao, Sung-Man Kim, Venu Vellanki, Ronald Goossens
Publikováno v:
SPIE Proceedings.
Proximity matching is a common activity in the wafer fabs 1,2,3 for purposes such as process transfer, capacity expansion, improved scanner yield and fab productivity. The requirements on matching accuracy also become more and more stringent as CD er
Autor:
Xiaoxu Xie, R. C. Peng, John Lin, H. J. Lee, Chia-Yang Chang, Rafael Aldana, Simon Hsieh, Chih-Tsung Shih, H. H. Liu, Ronald Goossens, W. H. Hung, Wenjin Shao, H. C. Wu, Chii-Ming M. Wu, Yi-Yin Chen, Y. Cao, Tommy Lee, Tsung-Chih Chien, K. W. Chang
Publikováno v:
27th European Mask and Lithography Conference.
Given the continually decreasing k1 factor and process latitude in advanced technology nodes, it is important to fully understand and control the variables that impact imaging behavior in the lithography process. In this joint work between TSMC and A
Autor:
Vinay Nair, Xu Xie, Eric Janda, Zhongchang Yu, Rafael Aldana, Anton J. deVilliers, Yuan He, Mike Hyatt, Erik Byers, Y. Cao, Tjitte Nooitgedagt, Peter Engblom, Hua-yu Liu, Danielle Hines, Wenjin Shao, Junwei Lu, Chang-Qun Ma, Chris Aquino, Scott L. Light, Jianming Zhou, Ronald Goossens
Publikováno v:
SPIE Proceedings.
Scanner matching based on wafer data has proven to be successful in the past years, but its adoption into production has been hampered by the significant time and cost overhead involved in obtaining large amounts of statistically precise wafer CD dat
Autor:
Hsin-Chang Lee, Rafael Aldana, C. P. Yeh, Xu Xie, R. C. Peng, Simon Hsieh, Chih-Tsung Shih, A. Bruguier, John Lin, H. Cao, Y. W. Guo, Ching-Yu Chang, Ronald Goossens, P. C. Huang, H. H. Liu, Tsung-Chih Chien, Y. Cao, Jen-Tin Lee, K. W. Chang, Wenjin Shao, Chia-Yang Chang
Publikováno v:
SPIE Proceedings.
Given the decrease in k1 factor for 65nm-node lithography technology and beyond, it is increasingly important to understand and control the variables which impact scanner imaging behavior in the lithography process. In this work, we explore using mod
Publikováno v:
SPIE Proceedings.
To fulfill Moore's law the R&D stage of 3x nm HP nodes will have to be reached in 2008. Conventional DUV immersion technology is resolution limited to half pitch values exceeding 40 nm. Double Patterning Technology (DPT) is a major candidate to reach
Autor:
Paul van Adrichem, Fei Du, Youri van Dommelen, Rafael Aldana, Keith Gronlund, Roel Knops, Robert John Socha, Henry Meggens, Ronald Goossens, Venu Vellanki, Justin Gau, Dorothe Oorschot, Stephen Hsu, Koen Schreel, Wenjin Shao, Liesbeth Reijnen, Luoqi Chen, Zongchang Yu, Xu Xie
Publikováno v:
Japanese Journal of Applied Physics. 50:06GB01
FlexRay programmable illumination and LithoTuner software is combined in several use cases. The first use case is source mask optimization (SMO) in which the process window is maximized for a static random access memory (SRAM) design. In a 55 nm half