Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Ronald G. Filippi"'
Autor:
Haojun Zhang, Tian Shen, Ronald G. Filippi, Linjun Cao, Bianzhu Fu, Kong Boon Yeap, Seungman Choi, Cathryn Christiansen, Patrick Justison, James Zhang, Sean P. Ogden
Publikováno v:
IRPS
Electromigration reliability of BEOL Cu interconnects with various metal line widths and via sizes has been studied. EM lifetime significantly improves from minimum width to three times the minimum width, and then saturates. In addition, the EM lifet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f339b2b92ceef48dc5396572ea2db08f
https://doi.org/10.1109/irps.2018.8353600
https://doi.org/10.1109/irps.2018.8353600
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
A novel approach for estimating variation in the TDDB failure time is reported. The results for structures with Dual Damascene copper-based metallization and a low-k dielectric material demonstrate that variation in the initial current at stress reas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98af714b44ab7a503a45d5b675243e43
https://doi.org/10.1109/irps.2016.7574597
https://doi.org/10.1109/irps.2016.7574597
Autor:
Baozhen Li, Ronald G. Filippi, Timothy D. Sullivan, Emmanuel Yashchin, Cathryn Christiansen, Jason Gill
Publikováno v:
Microelectronics Reliability. 46:2049-2055
The three-parameter lognormal distribution has been demonstrated for applications in electromigration data analysis, especially for Cu interconnect structures with insufficient redundancy. Examples are given on estimating parameter values from experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33f0ef05d769debe34ac78e37da94cfd
https://doi.org/10.1016/j.microrel.2006.01.001
https://doi.org/10.1016/j.microrel.2006.01.001
Autor:
M. A. Korhonen, Robert Rosenberg, Ronald G. Filippi, Thomas M. Shaw, P.-C. Wang, J. F. White, C.-P. Eng, Richard A. Wachnik, Timothy D. Sullivan, D. Chidambarrao
Publikováno v:
Journal of Applied Physics. 91:5787-5795
Resistance saturation as a function of current density, stripe length, stripe width, and temperature is investigated for a two-level structure with Ti/AlCu/Ti/TiN stripes and interlevel W stud vias. A simple model based on first principles is present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe003b211b30428fe14c8fb856057d6
https://doi.org/10.1063/1.1459616
https://doi.org/10.1063/1.1459616
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:01A112
In this work, the authors report the extensive time-to-breakdown (TBD) data collected from back end of line/middle of the line and metal insulator metal capacitor dielectrics that exhibit not only non-Poisson area scaling but also multiple modal (or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381f6bb3685273c841cf71652785c84b
https://doi.org/10.1116/1.4972871
https://doi.org/10.1116/1.4972871
Autor:
B.N. Rhoads, G. Stojakovic, D.D. Miura, F. Schnabel, David L. Rath, Jeffrey P. Gambino, Ronald G. Filippi, Edward W. Kiewra, R.V.S.S.N. Ravikumar, Kenneth J. McCullough, D.J. Delehanty
Publikováno v:
Solid State Phenomena. :51-54
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c85df0cbd18a277a8fc08ebd043251e
https://doi.org/10.4028/www.scientific.net/ssp.76-77.51
https://doi.org/10.4028/www.scientific.net/ssp.76-77.51
Autor:
Kenneth J. McCullough, E.W. Kiewra, D.D. Miura, B.N. Rhoads, G. Stojakovic, R.V.S.S.N. Ravikumar, Ronald G. Filippi, David L. Rath, D.J. Delehanty
Publikováno v:
Solid State Phenomena. :31-34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c73d459ec13e65e5afb5fc7b5805c51
https://doi.org/10.4028/www.scientific.net/ssp.76-77.31
https://doi.org/10.4028/www.scientific.net/ssp.76-77.31
Autor:
Stefan Weber, Rainer Florian Schnabel, Lynne Gignac, Yun-Yu Wang, Lawrence A. Clevenger, R. C. Iggulden, J. L. Hurd, Ronald G. Filippi, Kenneth P. Rodbell
Publikováno v:
Journal of Applied Physics. 88:5093-5099
The microstructure was measured for AlCu lines, formed using either a traditional planar metal subtractive etch process or a newly developed hot AlCu-trench-damascene process. It was found that 0.35 μm wide damascene AlCu lines formed a large graine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d7584098554e4d50d269cc7ac237909
https://doi.org/10.1063/1.1314612
https://doi.org/10.1063/1.1314612
Publikováno v:
Journal of Applied Physics. 78:3756-3768
The electromigration short‐length effect has been investigated by testing a two‐level structure with Ti‐AlCu‐Ti stripes and interlevel tungsten (W) stud vias. This investigation represents a complete study of the short‐length effect using a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39f2803ddc9c1da64d86c3ea123bc86c
https://doi.org/10.1063/1.360749
https://doi.org/10.1063/1.360749
Autor:
Ping-Chuan Wang, Ronald G. Filippi
Publikováno v:
Applied Physics Letters. 78:3598-3600
The electromigration threshold in copper interconnects is reported in this study. The length-dependent electromigration degradation rate is observed and quantified in the temperature range of 295–400 °C. Based on the Blech electromigration model [
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::273f4d106377d2c40c8eb729c7dcdff1
https://doi.org/10.1063/1.1371251
https://doi.org/10.1063/1.1371251